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BT136-500

NXP Semiconductors

BT136-500 by NXP Semiconductors

BT136-500 by NXP Semiconductors is a TRIAC with 4A max RMS on-state current, 35mA DC gate trigger current, and 500V repetitive peak off-state voltage. It is used in applications requiring precise AC power control such as dimmer switches, motor speed control, and heating regulation.

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Vyrian

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ACDS - Activité Composants Distribution Service

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ABC Electronics Ltd.

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Nova Conductors

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Corohmni

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Aztec Data Supply Inc.

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AZTECH Wire

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Overview

Discover the BT136-500 by NXP Semiconductors, a high-quality TRIAC designed for a wide range of applications. With its reliable construction and innovative design, this product offers customers unparalleled performance and value. Whether you are looking to control power in lighting systems or motor speed control, this TRIAC is the perfect solution. Trust NXP Semiconductors for all your semiconductor needs and experience the benefits of superior quality and efficiency with the BT136-500.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it a reliable choice for various applications.

Maximum DC Gate Trigger Current: 35 mA

With a high maximum DC gate trigger current, this product ensures efficient and reliable operation for different circuits.

Configuration: SINGLE

The single configuration simplifies installation and maintenance, making this product user-friendly and convenient for users.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and integration into different systems, adding versatility to the product.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and minimizes the risk of loose connections, ensuring stable performance.

Maximum Repetitive Peak Off-state Leakage Current: 500 uA

The low maximum repetitive peak off-state leakage current helps in reducing power consumption and improving overall efficiency.

No. of Terminals: 3

The three terminals offer flexibility in connecting the device to other components, enabling customization and adaptability for various setups.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy installation and secure mounting, ensuring stability in different environments.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh conditions and maintain reliable performance in extreme environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level TRIAC trigger device type ensures precise control and accurate switching, making this product ideal for sensitive applications.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, making it easier for users to set up and use the product.

Maximum RMS On-state Current: 4 A

The high maximum RMS on-state current capacity allows the product to handle heavy loads and deliver consistent performance under varying conditions.

Maximum DC Gate Trigger Voltage: 1.5 V

The low maximum DC gate trigger voltage enables efficient triggering and control, ensuring smooth operation and optimal performance.

Case Connection: MAIN TERMINAL 2

The case connection to main terminal 2 enhances safety and reliability, reducing the risk of short circuits and ensuring secure operation.

Repetitive Peak Off-state Voltage: 500 V

With a high repetitive peak off-state voltage, this product can withstand voltage spikes and surges, making it suitable for high-power applications.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

The high minimum critical rate of rise of off-state voltage ensures rapid response and precise control, enhancing the product's reliability and performance.

Maximum Holding Current: 15 mA

The maximum holding current capacity allows the product to maintain operation without external triggers, ensuring continuous functionality in various setups.

Technical Specifications

Triode For Alternating Current (TRIAC) BT136-500 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from NXP Semiconductors

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

15 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Maximum Repetitive Peak Off-state Leakage Current:

500 uA

Repetitive Peak Off-state Voltage:

500 V

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BT136-500 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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