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DTA10F

Onsemi

DTA10F by Onsemi

DTA10F by Onsemi is a TRIAC with 1.4V max on-state voltage, 30mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -40 °C to 150°C, suitable for applications requiring up to 10A RMS on-state current and 500V repetitive peak off-state voltage.

Median Price

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Lifecycle Status

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Kulean Microsystems

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TANS Electronics

Latvia . 2,906 parts In-Stock

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Northwest PG Solutions

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Overview

Looking to upgrade your electronics? Look no further than the DTA10F by Onsemi! As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. The DTA10F falls under the category of Triode For Alternating Current (TRIAC), making it perfect for a wide range of applications. With a maximum RMS On-state current of 10A and a repetitive peak off-state voltage of 500V, this product offers exceptional value and performance. Say goodbye to unreliable electronics and hello to the DTA10F by Onsemi!

Feature Benefit Bullets

Maximum On-state Voltage: 1.4 V

Low on-state voltage helps in reducing power losses and improves efficiency of the device.

Maximum DC Gate Trigger Current: 30 mA

Allows for precise control and reliable triggering of the device.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power wastage when the device is in off-state.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions without compromising performance.

Trigger Device Type: TRIAC

TRIAC technology allows for bidirectional control of current flow, making it suitable for AC circuits.

Minimum Operating Temperature: -40 °C

Device can operate in extreme cold conditions, providing flexibility in application usage.

Maximum RMS On-state Current: 10 A

High on-state current capability allows for handling of heavy loads without overheating.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage ensures efficient operation and compatibility with control circuits.

Repetitive Peak Off-state Voltage: 500 V

High off-state voltage rating makes the device suitable for applications requiring high isolation voltages.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA10F attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.4 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA10F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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