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TIC225E

Texas Instruments

TIC225E by Texas Instruments

TIC225E by Texas Instruments is a TRIAC with 8A RMS on-state current, 3V max DC gate trigger voltage, and 500V repetitive peak off-state voltage. It operates b/w -40 to 110°C and is ideal for AC power control applications requiring precise switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,396 parts In-Stock

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Vyrian

USA . 3,275 parts In-Stock

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3,275

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,528 parts In-Stock

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$1.100

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1,528

$1.100

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Parana Technologies

USA . 550 parts In-Stock

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$3.187

100+ parts

$295.970

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$2.868

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550

$3.187

$295.970

$2.868

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DigiPath Technology Company

USA . 1,748 parts In-Stock

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$3.509

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$3.509

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ChromeModa Solutions

Germany . 1,494 parts In-Stock

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$3.581

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$2.936

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1,494

$3.581

$2.936

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IDEA Electronic Components Group

UK . 628 parts In-Stock

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$3.581

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$3.223

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628

$3.581

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$3.223

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One Stop Electronics

USA . 1,489 parts In-Stock

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$6.100

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$6.100

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AZTECH Wire

Italy . 327 parts In-Stock

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$17.219

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327

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Semicontronic

India . 1,249 parts In-Stock

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$18.100

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$17.648

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$17.557

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1,249

$18.100

$17.648

$17.557

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Corphita

USA . 622 parts In-Stock

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Corohmni

South Africa . 479 parts In-Stock

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Overview

Elevate your electronic projects with the TIC225E by Texas Instruments, a high-quality TRIAC that guarantees reliability and performance. From controlling power in lighting systems to regulating temperature in appliances, this versatile component offers endless possibilities for innovation. With Texas Instruments' reputation for excellence in manufacturing, you can trust that the TIC225E delivers unmatched quality and precision. Upgrade your designs today and experience the value and benefits that this TRIAC brings to your creations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

The low gate trigger current allows for precise control over the switching of the TRIAC, leading to reliable performance.

Maximum Leakage Current: 2 mA

The low leakage current ensures minimal power wastage and enhances the overall efficiency of the product.

Maximum Operating Temperature: 110 °C

The high operating temperature range makes this TRIAC suitable for a wide range of industrial and commercial applications.

Trigger Device Type: TRIAC

Being a TRIAC, this device is capable of conducting in both directions, making it versatile for AC switching applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in harsh environments or extreme temperatures.

Maximum RMS On-state Current: 8 A

The high on-state current rating allows this TRIAC to handle heavy loads with ease, making it suitable for power control applications.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage requirement ensures compatibility with a wide range of control circuits and voltage levels.

Repetitive Peak Off-state Voltage: 500 V

The high off-state voltage rating allows for safe operation in high voltage applications, ensuring user safety and device longevity.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

The critical rate of rise of commutation voltage ensures smooth switching transitions, reducing the risk of voltage spikes and disturbances.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

The high rate of rise of off-state voltage ensures quick turn-off of the TRIAC, preventing excessive power dissipation and improving efficiency.

Maximum Holding Current: 30 mA

The holding current specification ensures that the TRIAC remains in the conducting state after being triggered, enhancing its stability during operation.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC225E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC225E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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