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DTA12F

Onsemi

DTA12F by Onsemi

Onsemi's DTA12F is a TRIAC with 1.4V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. Ideal for AC applications, it has a 12A max RMS on-state current, 3V max DC gate trigger voltage, and 500V repetitive peak off-state voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 1,056 parts In-Stock

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SupplyDigital Components

Austria . 7,124 parts In-Stock

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TANS Electronics

Latvia . 5,932 parts In-Stock

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Kulean Microsystems

USA . 5,026 parts In-Stock

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Problanco Electronics

Mexico . 3,629 parts In-Stock

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Corphita

USA . 1,384 parts In-Stock

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Northwest PG Solutions

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Corohmni

South Africa . 124 parts In-Stock

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UHIMA Technologies

Türkiye . 69 parts In-Stock

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Overview

Unlock the power of efficient and reliable control with the DTA12F by Onsemi. Designed to deliver high performance and durability, this TRIAC offers seamless operation in a variety of applications. Whether you are looking to optimize your lighting systems or enhance your motor control solutions, the DTA12F provides unmatched value, precision, and efficiency. Trust in Onsemi's reputation for excellence and innovation, and experience the advantages that this product brings to your projects. Elevate your designs with the DTA12F and take your products to new heights of success.

Feature Benefit Bullets

Maximum On-state Voltage: 1.4 V

Low voltage drop during on-state helps in reducing power dissipation and improving efficiency.

Maximum DC Gate Trigger Current: 50 mA

Relatively low gate trigger current allows for easy and efficient control of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power wastage when the device is in the off state.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for reliable performance in various environments.

Trigger Device Type: TRIAC

TRIAC trigger device type offers versatile control options for alternating current applications.

Maximum RMS On-state Current: 12 A

High maximum RMS current rating allows for handling of large loads with ease.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage enables efficient operation of the TRIAC with minimal control voltage requirement.

Repetitive Peak Off-state Voltage: 500 V

High off-state voltage rating provides reliable isolation and protection for connected devices.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA12F attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.4 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA12F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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