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DTM6E

Onsemi

DTM6E by Onsemi

DTM6E by Onsemi is a TRIAC with 1.5V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. Ideal for AC applications, it has a 6A max RMS on-state current and operates b/w -45 °C to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,239 parts In-Stock

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Digiode

USA . 1,401 parts In-Stock

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Northwest PG Solutions

USA . 1,416 parts In-Stock

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$3.298

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SupplyDigital Components

Austria . 7,092 parts In-Stock

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Problanco Electronics

Mexico . 6,004 parts In-Stock

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Kulean Microsystems

USA . 5,360 parts In-Stock

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TANS Electronics

Latvia . 4,157 parts In-Stock

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Corphita

USA . 2,343 parts In-Stock

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UHIMA Technologies

Türkiye . 800 parts In-Stock

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Native Components

USA . 679 parts In-Stock

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$2.908

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Corohmni

South Africa . 194 parts In-Stock

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Overview

Upgrade your electronics with the DTM6E by Onsemi, a top-quality TRIAC that guarantees superior performance and reliability. Designed by the industry-leading manufacturer, this product is perfect for a wide range of applications. With its advanced features and innovative design, the DTM6E offers unmatched value and benefits to customers. Say goodbye to subpar performance and hello to a new level of excellence with the DTM6E by Onsemi.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low voltage drop ensures efficient power distribution and reduces heat generation.

Maximum DC Gate Trigger Current: 50 mA

Allows for reliable and precise triggering of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss when the TRIAC is in the off-state.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for use in various environmental conditions.

Trigger Device Type: TRIAC

TRIAC design provides superior performance in AC control applications.

Minimum Operating Temperature: -45 °C

Can operate in cold environments without any issues.

Maximum RMS On-state Current: 6 A

Capable of handling high current loads effectively.

Maximum DC Gate Trigger Voltage: 2 V

Low trigger voltage requirement for reliable activation.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating ensures safety and reliability.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

Allows for fast commutation and switching of the TRIAC.

Maximum Holding Current: 50 mA

Provides stable operation when current drops below the holding current level.

Technical Specifications

Triode For Alternating Current (TRIAC) DTM6E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTM6E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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