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DTA6E

Onsemi

DTA6E by Onsemi

DTA6E by Onsemi is a TRIAC with max on-state voltage of 1.5V, DC gate trigger current of 50mA, and leakage current of 2mA. It operates b/w -45 to 125 °C and has a max RMS on-state current of 6A. Ideal for AC applications requiring precise switching control.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Vyrian

USA . 2,216 parts In-Stock

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Digiode

USA . 620 parts In-Stock

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Kulean Microsystems

USA . 5,422 parts In-Stock

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SupplyDigital Components

Austria . 4,120 parts In-Stock

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TANS Electronics

Latvia . 4,079 parts In-Stock

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Problanco Electronics

Mexico . 1,528 parts In-Stock

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Northwest PG Solutions

USA . 1,242 parts In-Stock

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UHIMA Technologies

Türkiye . 558 parts In-Stock

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Corphita

USA . 539 parts In-Stock

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Corohmni

South Africa . 164 parts In-Stock

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Native Components

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Overview

Discover the power of the DTA6E by Onsemi, a top-tier manufacturer known for delivering high-quality products in the Triode For Alternating Current (TRIAC) category. With a maximum RMS On-state Current of 6A and a Repetitive Peak Off-state Voltage of 400V, this TRIAC offers reliable performance for a wide range of applications. From lighting control to motor speed regulation, the DTA6E provides exceptional value and efficiency. Trust Onsemi to provide the innovative solutions you need to succeed in today's competitive market.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low voltage drop leads to efficient power usage and minimal heat generation.

Maximum DC Gate Trigger Current: 50 mA

Allows for reliable and consistent triggering of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss when TRIAC is in off-state.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for use in various environments.

Trigger Device Type: TRIAC

TRIAC trigger provides precise control over the switching process.

Minimum Operating Temperature: -45 °C

Can operate in low temperature conditions without impacting performance.

Maximum RMS On-state Current: 6 A

Capable of handling high current loads without overheating.

Maximum DC Gate Trigger Voltage: 2 V

Low trigger voltage ensures efficient operation and reduced power consumption.

Repetitive Peak Off-state Voltage: 400 V

Can handle high off-state voltages, suitable for various applications.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

Ensures fast and reliable switching performance.

Maximum Holding Current: 50 mA

Low holding current allows for stable operation of the TRIAC.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA6E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA6E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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