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DTA6C

Onsemi

DTA6C by Onsemi

DTA6C by Onsemi is a TRIAC with 1.5V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -40 °C to 125°C, ideal for AC power control applications like dimmers and motor speed controllers.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

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Problanco Electronics

Mexico . 7,036 parts In-Stock

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Kulean Microsystems

USA . 6,568 parts In-Stock

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TANS Electronics

Latvia . 4,158 parts In-Stock

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SupplyDigital Components

Austria . 3,922 parts In-Stock

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Northwest PG Solutions

USA . 2,171 parts In-Stock

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Native Components

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Corphita

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Corohmni

South Africa . 152 parts In-Stock

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UHIMA Technologies

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Overview

Unlock the power of seamless control with the DTA6C by Onsemi, a top-of-the-line TRIAC device designed to deliver unparalleled performance and reliability. Manufactured by a trusted industry leader, this product is ideal for a wide range of applications, from lighting and heating control to motor speed regulation. With its low on-state voltage and high operating temperature, the DTA6C offers customers exceptional value, efficiency, and precision in their electronic systems. Trust Onsemi to provide you with the quality and innovation you need to stay ahead in today's competitive market.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage helps in minimizing power loss and improving efficiency.

Maximum DC Gate Trigger Current: 50 mA

A higher gate trigger current allows for better control and reliability in switching operations.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power wastage when the TRIAC is in off state.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for reliable performance in various environmental conditions.

Trigger Device Type: TRIAC

Being a TRIAC, this device can control power in both directions, making it versatile for AC applications.

Maximum RMS On-state Current: 6 A

High on-state current capacity enables the TRIAC to handle heavy loads without overheating.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient triggering of the TRIAC with minimal input power.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating provides robust protection against voltage spikes and surges.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

Higher rate of rise of commutation voltage ensures faster and more reliable switching operations.

Maximum Holding Current: 50 mA

Higher holding current ensures the TRIAC remains in the on-state even in the presence of noise or disturbances.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA6C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA6C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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