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DTA6G

Onsemi

DTA6G by Onsemi

DTA6G by Onsemi is a TRIAC with 600V repetitive peak off-state voltage, 6A max RMS on-state current, and -40 to 125 °C operating temperature range. Ideal for AC power control applications requiring precise gate trigger characteristics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,268 parts In-Stock

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Vyrian

USA . 899 parts In-Stock

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899

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Distributors (Availability)

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Native Components

USA . 207 parts In-Stock

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$30.660

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$29.434

207

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$29.434

Northwest PG Solutions

USA . 492 parts In-Stock

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$33.726

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492

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Kulean Microsystems

USA . 6,369 parts In-Stock

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6,369

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Problanco Electronics

Mexico . 4,990 parts In-Stock

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4,990

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TANS Electronics

Latvia . 3,810 parts In-Stock

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SupplyDigital Components

Austria . 3,699 parts In-Stock

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3,699

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Corphita

USA . 2,475 parts In-Stock

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UHIMA Technologies

Türkiye . 107 parts In-Stock

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Corohmni

South Africa . 70 parts In-Stock

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Overview

Experience the superior quality and reliability of the DTA6G TRIAC by Onsemi. This versatile component is perfect for a wide range of applications, offering customers exceptional value and performance. Trust in the reputation of Onsemi as a leading manufacturer in the industry, and unlock the benefits of this product's efficient design and durability. Upgrade your projects with the DTA6G and see the difference it can make.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage helps in reducing power dissipation and increasing efficiency.

Maximum DC Gate Trigger Current: 50 mA

A high gate trigger current ensures reliable switching of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current helps in maintaining the integrity of the circuit and preventing unintended switching.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for the TRIAC to be used in various industrial applications without risk of damage.

Trigger Device Type: TRIAC

Being a TRIAC, it is suitable for controlling AC power in various applications such as lighting, motor speed control, and heating.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures reliable operation even in extreme cold conditions.

Maximum RMS On-state Current: 6 A

High on-state current rating allows for handling higher loads, making it suitable for heavy-duty applications.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient control of the TRIAC with minimal power consumption.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating allows for reliable operation without risk of breakdown.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

Fast commutation voltage rate ensures quick and efficient switching of the TRIAC, reducing power losses.

Maximum Holding Current: 50 mA

High holding current ensures that the TRIAC remains in the on-state even after the gate trigger is removed, improving reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA6G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA6G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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