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DTA6E-N

Onsemi

DTA6E-N by Onsemi

DTA6E-N by Onsemi is a TRIAC with 1.5V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -40 °C to 125°C, suitable for applications requiring up to 6A RMS on-state current such as AC power control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,098 parts In-Stock

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Vyrian

USA . 1,271 parts In-Stock

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Native Components

USA . 958 parts In-Stock

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$0.681

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Northwest PG Solutions

USA . 2,240 parts In-Stock

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$0.749

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TANS Electronics

Latvia . 6,085 parts In-Stock

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SupplyDigital Components

Austria . 5,955 parts In-Stock

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Kulean Microsystems

USA . 5,638 parts In-Stock

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UHIMA Technologies

Türkiye . 915 parts In-Stock

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Problanco Electronics

Mexico . 867 parts In-Stock

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Corphita

USA . 499 parts In-Stock

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Corohmni

South Africa . 357 parts In-Stock

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Overview

Upgrade your electronics with the DTA6E-N by Onsemi, a top-quality TRIAC device designed to enhance the performance of your applications. Manufactured by Onsemi, a trusted name in the industry, this TRIAC offers superior reliability and efficiency. Whether you're looking to control power in lighting systems, motor speed controls, or heating elements, the DTA6E-N provides unmatched value with its high-performance capabilities. Experience seamless operation and improved functionality with this innovative product from Onsemi.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage allows for efficient conduction, reducing power loss and improving overall performance.

Maximum DC Gate Trigger Current: 50 mA

Allows for reliable and consistent triggering, ensuring proper operation of the device.

Maximum Leakage Current: 2 mA

Low leakage current results in less power consumption and better efficiency.

Maximum Operating Temperature: 125 °C

Wide operating temperature range provides flexibility for various applications and environments.

Trigger Device Type: TRIAC

TRIAC technology offers precise control and switching capabilities for AC circuits.

Minimum Operating Temperature: -40 °C

Suitable for use in extreme cold conditions without sacrificing performance.

Maximum RMS On-state Current: 6 A

High on-state current rating allows for handling of higher loads with ease.

Maximum DC Gate Trigger Voltage: 2 V

Low trigger voltage enables efficient and smooth operation of the TRIAC.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating provides robust insulation and protection against voltage spikes.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

Fast rate of rise ensures quick and reliable switching, reducing the risk of voltage spikes or damage.

Maximum Holding Current: 50 mA

Sufficient holding current ensures the device remains in the on state reliably until triggered off.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA6E-N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA6E-N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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