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DTA6G-N

Onsemi

DTA6G-N by Onsemi

DTA6G-N by Onsemi is a TRIAC with 600V repetitive peak off-state voltage, 6A max RMS on-state current, and 125 °C max operating temperature. Ideal for AC power control applications due to its 50mA DC gate trigger current and -40°C min operating temp.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,071 parts In-Stock

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Vyrian

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Native Components

USA . 492 parts In-Stock

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Northwest PG Solutions

USA . 1,323 parts In-Stock

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TANS Electronics

Latvia . 7,458 parts In-Stock

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Problanco Electronics

Mexico . 3,639 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 1,030 parts In-Stock

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Corphita

USA . 766 parts In-Stock

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UHIMA Technologies

Türkiye . 585 parts In-Stock

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Corohmni

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Overview

Upgrade your electronic devices with the high-quality DTA6G-N TRIAC by Onsemi. Designed for reliability and performance, this product offers seamless control of alternating current with a maximum RMS on-state current of 6A. With a maximum DC gate trigger current of 50mA and repetitive peak off-state voltage of 600V, this TRIAC is perfect for a range of applications. Trust Onsemi's expertise in semiconductor manufacturing to deliver top-notch products that meet your needs. Experience the value and benefits of the DTA6G-N for yourself!

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage helps in reducing power consumption and heat dissipation, improving energy efficiency of the device.

Maximum DC Gate Trigger Current: 50 mA

High trigger current ensures reliable switching performance, making the device suitable for high-power applications.

Maximum Leakage Current: 2 mA

Low leakage current reduces energy wastage and enhances the overall efficiency of the device.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the device to function effectively in various environments, ensuring reliability and durability.

Trigger Device Type: TRIAC

TRIAC design provides bidirectional control of AC power, making it suitable for a wide range of applications such as dimmer switches and motor speed controls.

Maximum RMS On-state Current: 6 A

High on-state current rating allows the device to handle large loads, making it suitable for applications that require high power handling capacity.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient control of the device, enabling precise switching capabilities.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating provides robust isolation from the mains, ensuring safety and reliability in high-voltage applications.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

Fast commutation voltage rate ensures quick and reliable switching operation, optimizing performance in dynamic applications.

Maximum Holding Current: 50 mA

High holding current minimizes the risk of false triggering and ensures stable operation of the device in various conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA6G-N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA6G-N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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