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DTA3C

Onsemi

DTA3C by Onsemi

DTA3C by Onsemi is a TRIAC with 1.8V max on-state voltage, 15mA max DC gate trigger current, and 1mA max leakage current. It operates b/w -30 °C to 100°C, suitable for AC power control applications like dimmers and motor speed controllers.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,307 parts In-Stock

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Digiode

USA . 1,324 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 187 parts In-Stock

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$0.719

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187

$0.719

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Northwest PG Solutions

USA . 189 parts In-Stock

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$0.791

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189

$0.791

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TANS Electronics

Latvia . 8,043 parts In-Stock

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Kulean Microsystems

USA . 6,488 parts In-Stock

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Problanco Electronics

Mexico . 3,446 parts In-Stock

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Corphita

USA . 2,121 parts In-Stock

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SupplyDigital Components

Austria . 930 parts In-Stock

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930

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Corohmni

South Africa . 307 parts In-Stock

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UHIMA Technologies

Türkiye . 179 parts In-Stock

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Overview

Unlock the power of efficient AC control with the DTA3C by Onsemi. Designed to deliver top-notch performance and reliability, this TRIAC is perfect for a wide range of applications. Whether you're looking to enhance your lighting systems or optimize motor speed control, the DTA3C offers unmatched quality and precision. Trust in Onsemi's reputation for excellence and experience the seamless operation and superior functionality that this product brings. Upgrade your projects today with the DTA3C and experience the difference firsthand.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

Low on-state voltage results in efficient operation and reduced power consumption.

Maximum DC Gate Trigger Current: 15 mA

Suitable gate trigger current for reliable and consistent operation.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power loss and enhanced performance.

Maximum Operating Temperature: 100 °C

Wide operating temperature range allows for versatility in different environments.

Trigger Device Type: TRIAC

TRIAC type trigger device ensures precise control and functionality.

Minimum Operating Temperature: -30 °C

Ability to operate in low temperatures increases reliability in various conditions.

Maximum RMS On-state Current: 3 A

High RMS on-state current capability for handling heavy loads.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage requirement for efficient triggering and control.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage capacity for increased safety and versatility in applications.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA3C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

1 mA

Maximum On-state Voltage:

1.8 V

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-30 Cel

Maximum RMS On-state Current:

3 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA3C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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