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DTA8G

Onsemi

DTA8G by Onsemi

DTA8G by Onsemi is a TRIAC with 600V repetitive peak off-state voltage, 8A max RMS on-state current, and 50mA max DC gate trigger current. It operates b/w -30 °C to 125°C, making it suitable for AC power control applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,850 parts In-Stock

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Vyrian

USA . 1,822 parts In-Stock

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Native Components

USA . 881 parts In-Stock

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$82.565

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$79.262

881

$82.565

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$79.262

Northwest PG Solutions

USA . 204 parts In-Stock

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$90.822

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204

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TANS Electronics

Latvia . 7,827 parts In-Stock

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7,827

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Kulean Microsystems

USA . 4,001 parts In-Stock

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4,001

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Problanco Electronics

Mexico . 3,967 parts In-Stock

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3,967

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SupplyDigital Components

Austria . 2,900 parts In-Stock

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2,900

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Corphita

USA . 1,947 parts In-Stock

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UHIMA Technologies

Türkiye . 208 parts In-Stock

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Corohmni

South Africa . 163 parts In-Stock

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Overview

Discover the power and reliability of the DTA8G by Onsemi, a top-quality TRIAC device designed for a wide range of alternating current applications. Manufactured by Onsemi, a trusted name in the industry, this TRIAC offers unmatched performance and durability. From lighting control to motor speed regulation, the DTA8G provides seamless operation and precise control. Experience the value and benefits of choosing Onsemi for your electronic components needs.

Feature Benefit Bullets

Maximum On-state Voltage: 1.6 V

Low on-state voltage helps in reducing power dissipation and improving energy efficiency of the product.

Maximum DC Gate Trigger Current: 50 mA

High gate trigger current ensures reliable and consistent switching of the TRIAC, making it suitable for various applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss when the TRIAC is in off-state, contributing to overall efficiency of the product.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the TRIAC to function effectively in both high and low temperature environments.

Trigger Device Type: TRIAC

Being a TRIAC, this device offers bidirectional conduction and can control both positive and negative cycles of the AC voltage, making it versatile for AC applications.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature enables the TRIAC to function in cold environments without any performance degradation.

Maximum RMS On-state Current: 8 A

High RMS on-state current rating makes the TRIAC suitable for handling heavy load currents in various AC applications.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage ensures efficient triggering of the TRIAC, reducing the power consumption of the control circuit.

Repetitive Peak Off-state Voltage: 600 V

High repetitive peak off-state voltage rating enables the TRIAC to withstand voltage spikes and surges, ensuring reliable performance in harsh electrical environments.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA8G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.6 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-30 Cel

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA8G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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