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DTA8F

Onsemi

DTA8F by Onsemi

DTA8F by Onsemi is a TRIAC with 1.6V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -30 °C to 125°C, suitable for AC power control applications like dimmers and motor speed controllers due to its 8A max RMS on-state current and 500V repetitive peak off-state voltage.

Median Price

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Lifecycle Status

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Digiode

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Vyrian

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Problanco Electronics

Mexico . 8,217 parts In-Stock

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SupplyDigital Components

Austria . 4,048 parts In-Stock

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Kulean Microsystems

USA . 3,653 parts In-Stock

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TANS Electronics

Latvia . 930 parts In-Stock

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Native Components

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Northwest PG Solutions

USA . 655 parts In-Stock

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UHIMA Technologies

Türkiye . 642 parts In-Stock

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Corohmni

South Africa . 486 parts In-Stock

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Overview

Experience the superior quality and reliability of the DTA8F by Onsemi, a leading manufacturer in the electronics industry. This TRIAC device offers a wide range of applications, from lighting control to motor speed regulation, providing customers with efficient and effective solutions for their projects. With a maximum on-state voltage of 1.6V and a maximum RMS on-state current of 8A, the DTA8F delivers exceptional performance and durability. Trust Onsemi to deliver top-notch products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Maximum On-state Voltage: 1.6 V

Low on-state voltage ensures efficient conduction and minimal power loss, making this product suitable for applications where energy efficiency is a priority.

Maximum DC Gate Trigger Current: 50 mA

High gate trigger current allows for reliable and quick switching of the TRIAC, making it suitable for high-performance applications that require fast response times.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power wastage when the TRIAC is in the off-state, leading to improved overall efficiency and reduced energy consumption.

Maximum Operating Temperature: 125 °C

Wide operating temperature range enables the TRIAC to function reliably in various environments, making it versatile and suitable for a range of applications.

Trigger Device Type: TRIAC

Being a TRIAC device, it offers bidirectional control of current flow, making it ideal for AC switching applications where both positive and negative cycles of the input waveform need to be controlled.

Repetitive Peak Off-state Voltage: 500 V

High off-state voltage rating allows for safe operation in high-voltage circuits, making this TRIAC suitable for applications that require handling of substantial electrical loads.

Maximum Holding Current: 300 mA

Sufficient holding current ensures that the TRIAC remains in the on-state once triggered, providing a stable performance in applications where continuous conduction is required.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA8F attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

300 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.6 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-30 Cel

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA8F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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