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DTA8C

Onsemi

DTA8C by Onsemi

DTA8C by Onsemi is a TRIAC with 1.6V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -30 °C to 125°C, suitable for AC power control applications like dimmers and motor speed controllers.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 906 parts In-Stock

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Vyrian

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Native Components

USA . 622 parts In-Stock

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$129.686

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Northwest PG Solutions

USA . 765 parts In-Stock

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TANS Electronics

Latvia . 6,958 parts In-Stock

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Problanco Electronics

Mexico . 6,786 parts In-Stock

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Kulean Microsystems

USA . 5,832 parts In-Stock

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SupplyDigital Components

Austria . 2,449 parts In-Stock

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Corphita

USA . 1,897 parts In-Stock

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UHIMA Technologies

Türkiye . 939 parts In-Stock

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Corohmni

South Africa . 233 parts In-Stock

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Overview

Unlock the power of seamless control with the DTA8C by Onsemi. Designed for efficiency and reliability, this TRIAC device offers a wide range of applications in industries such as lighting, heating, and motor control. With Onsemi's reputation for high-quality manufacturing, customers can trust in the durability and performance of the DTA8C. Experience the value and benefits of precise voltage regulation and enhanced safety features, making it the perfect choice for your electronic circuits. Elevate your projects with the DTA8C and empower your creations to reach new heights.

Feature Benefit Bullets

Maximum On-state Voltage: 1.6 V

Low on-state voltage helps in reducing power dissipation and improving efficiency of the product.

Maximum DC Gate Trigger Current: 50 mA

Ability to trigger with low gate current ensures efficient control over the device.

Maximum Leakage Current: 2 mA

Low leakage current helps in preventing unintended conduction, enhancing overall reliability of the product.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the product to be used in various environments.

Trigger Device Type: TRIAC

TRIAC trigger device type ensures precise and reliable switching operation.

Minimum Operating Temperature: -30 °C

Wide range of operating temperature makes this product suitable for diverse temperature conditions.

Maximum RMS On-state Current: 8 A

High on-state current rating enables the product to handle heavy loads effectively.

Maximum DC Gate Trigger Voltage: 3 V

Low trigger voltage requirement makes the product suitable for low-power control applications.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating allows the product to handle high voltage applications with ease.

Maximum Holding Current: 300 mA

High holding current ensures stable operation of the device during on-state conduction.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA8C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

300 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.6 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-30 Cel

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA8C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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