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TIC236C

Texas Instruments

TIC236C by Texas Instruments

TIC236C by Texas Instruments is a TRIAC with 12A RMS current, 300V repetitive peak off-state voltage, and 125°C max operating temp. Ideal for AC power control in various applications due to its 50mA DC gate trigger current, -45°C min operating temp, and 2mA max leakage current.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,622 parts In-Stock

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Digiode

USA . 3,830 parts In-Stock

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Halfin

Belgium . 185 parts In-Stock

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Parana Technologies

USA . 273 parts In-Stock

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$4.317

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$4.740

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273

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$4.740

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ChromeModa Solutions

Germany . 3,802 parts In-Stock

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$4.851

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$3.978

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$4.851

$3.978

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IDEA Electronic Components Group

UK . 1,492 parts In-Stock

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$4.851

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$4.366

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One Stop Electronics

USA . 810 parts In-Stock

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$17.100

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810

$17.100

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AZTECH Wire

Italy . 524 parts In-Stock

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$19.728

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Corphita

USA . 3,915 parts In-Stock

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DigiPath Technology Company

USA . 1,062 parts In-Stock

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$4.374

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$4.374

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Overview

Enhance your electronics projects with the reliable TIC236C by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and performance. The TIC236C falls under the category of Triode For Alternating Current (TRIAC), making it versatile for a wide range of applications. With a maximum RMS On-state current of 12 A and a Repetitive Peak Off-state Voltage of 300V, this TRIAC offers exceptional value and benefits to customers seeking efficiency and reliability in their designs. Choose the TIC236C for superior results in your next project.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

The low trigger current requirement ensures efficient operation and minimizes power loss.

Maximum Leakage Current: 2 mA

Low leakage current helps in maintaining the integrity of the circuit and prevents unintended triggering.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for versatile applications and ensures reliability under varying conditions.

Trigger Device Type: TRIAC

Having a TRIAC trigger device provides precise control over the switching of AC loads, making the product suitable for AC applications.

Minimum Operating Temperature: -45 °C

The ability to operate at low temperatures expands the range of environments where this product can be used.

Maximum RMS On-state Current: 12 A

A high RMS on-state current rating allows the product to handle heavier loads and provides a reliable performance.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage requirement makes the product energy efficient and suitable for low voltage applications.

Repetitive Peak Off-state Voltage: 300 V

The high off-state voltage rating ensures safe and reliable operation, even in high voltage applications.

Maximum Holding Current: 50 mA

The holding current specification ensures the TRIAC remains in the on-state once triggered, enhancing system stability.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC236C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

300 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC236C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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