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DTB8C

Onsemi

DTB8C by Onsemi

DTB8C by Onsemi is a TRIAC with 1.6V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. Ideal for AC applications, it has a max RMS on-state current of 8A and repetitive peak off-state voltage of 200V. Operating up to 125 °C, it's suitable for various triggering needs.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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Digiode

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TANS Electronics

Latvia . 4,777 parts In-Stock

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SupplyDigital Components

Austria . 3,563 parts In-Stock

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Kulean Microsystems

USA . 2,894 parts In-Stock

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Problanco Electronics

Mexico . 2,616 parts In-Stock

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Corphita

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Northwest PG Solutions

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UHIMA Technologies

Türkiye . 648 parts In-Stock

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Native Components

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Overview

Experience the power of reliability with the DTB8C by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and performance in their Triode For Alternating Current (TRIAC) products. The DTB8C offers maximum on-state voltage of 1.6V and a maximum RMS on-state current of 8A, making it ideal for a wide range of applications. From home automation to industrial controls, this TRIAC provides unparalleled value, benefits, and advantages to customers looking for a dependable solution. Trust in Onsemi's expertise and elevate your projects with the DTB8C today.

Feature Benefit Bullets

Maximum On-state Voltage: 1.6 V

Low on-state voltage ensures efficient conduction and minimal power loss during operation.

Maximum DC Gate Trigger Current: 50 mA

High gate trigger current allows for reliable and consistent switching of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current helps in maintaining the off-state condition when the TRIAC is not triggered.

Maximum Operating Temperature: 125 °C

Wide operating temperature range ensures stability and performance under various environmental conditions.

Trigger Device Type: TRIAC

Being a TRIAC, this device is suitable for AC applications and provides bidirectional control of current flow.

Maximum RMS On-state Current: 8 A

High on-state current rating allows the TRIAC to handle large loads or currents without overheating.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures easy and efficient control of the TRIAC with compatible control circuits.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating provides reliable insulation and blocking of current in off-state condition.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB8C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.6 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTB8C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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