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DTB8G

Onsemi

DTB8G by Onsemi

The Onsemi DTB8G is a TRIAC with 600V repetitive peak off-state voltage, 8A max RMS on-state current, and 125 °C operating temp. Ideal for AC power control applications requiring a trigger device with 2V max DC gate trigger voltage and 50mA max DC gate trigger current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,286 parts In-Stock

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Vyrian

USA . 1,015 parts In-Stock

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Native Components

USA . 456 parts In-Stock

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$0.860

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456

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Northwest PG Solutions

USA . 1,407 parts In-Stock

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$0.946

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$0.946

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SupplyDigital Components

Austria . 7,539 parts In-Stock

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7,539

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Problanco Electronics

Mexico . 6,265 parts In-Stock

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6,265

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Kulean Microsystems

USA . 2,860 parts In-Stock

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2,860

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TANS Electronics

Latvia . 1,952 parts In-Stock

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Corphita

USA . 490 parts In-Stock

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UHIMA Technologies

Türkiye . 489 parts In-Stock

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Corohmni

South Africa . 258 parts In-Stock

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Overview

Elevate your electrical projects with the DTB8G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their products. The DTB8G falls under the category of Triode For Alternating Current (TRIAC), offering a maximum RMS On-state Current of 8 A and Repetitive Peak Off-state Voltage of 600 V. Perfect for a wide range of applications, this TRIAC provides seamless control and efficiency in your circuits. Don't settle for anything less than superior performance - choose the DTB8G for unparalleled value and benefits in all your projects.

Feature Benefit Bullets

Maximum On-state Voltage: 1.6 V

Low maximum on-state voltage allows for efficient conduction, reducing power loss and heat generation, making this product a reliable choice for various applications.

Maximum DC Gate Trigger Current: 50 mA

High gate trigger current ensures reliable and consistent switching of the TRIAC, making it suitable for demanding applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss when the TRIAC is in the off-state, contributing to energy efficiency and overall performance of the product.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable performance even in harsh environmental conditions, increasing the versatility and durability of the product.

Trigger Device Type: TRIAC

Being a TRIAC (Triode for Alternating Current), this product can control both positive and negative halves of an AC cycle, making it suitable for AC power control applications.

Maximum RMS On-state Current: 8 A

High maximum RMS on-state current capability allows the TRIAC to handle high current loads without compromising performance, making it ideal for heavy-duty applications.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient triggering of the TRIAC, leading to reliable and precise control of the switching operation, making this product suitable for critical applications.

Repetitive Peak Off-state Voltage: 600 V

High repetitive peak off-state voltage rating ensures the TRIAC can withstand voltage spikes and transients, making it a robust and reliable choice for applications with varying voltage requirements.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB8G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.6 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTB8G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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