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2N5273

Texas Instruments

2N5273 by Texas Instruments

2N5273 by Texas Instruments is a TRIAC with 150mA DC gate trigger current, 25A RMS on-state current, and 200V repetitive peak off-state voltage. It operates b/w -40°C to 125°C, ideal for AC power control applications like dimmers and motor speed controllers.

Median Price

$61.250

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Forefront Electronics and Design

USA . 3 parts In-Stock

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$61.250

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Vyrian

USA . 8,281 parts In-Stock

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Digiode

USA . 1,066 parts In-Stock

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Electronic Expediters

USA . 69 parts In-Stock

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Northwest PG Solutions

USA . 2,122 parts In-Stock

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$2.508

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Parana Technologies

USA . 1,080 parts In-Stock

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$3.859

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$4.343

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$3.859

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DigiPath Technology Company

USA . 1,106 parts In-Stock

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$4.249

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$3.909

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ChromeModa Solutions

Germany . 6,377 parts In-Stock

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$4.336

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$3.556

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$4.336

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IDEA Electronic Components Group

UK . 2,084 parts In-Stock

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$4.336

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$3.902

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AZTECH Wire

Italy . 489 parts In-Stock

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$12.506

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One Stop Electronics

USA . 1,184 parts In-Stock

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$17.100

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Corphita

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Native Components

USA . 752 parts In-Stock

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Assy Fe

Spain . 25 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the 2N5273 TRIAC. Perfect for a variety of applications, this trigger device offers maximum DC gate trigger current of 150 mA and maximum RMS on-state current of 25 A, providing customers with exceptional performance and efficiency. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations. Choose the 2N5273 for unmatched value and benefits in your next project.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 150 mA

The high maximum DC Gate Trigger Current ensures reliable and consistent triggering of the TRIAC, leading to smooth and stable operation.

Maximum Leakage Current: 1 mA

Low leakage current helps in minimizing power loss and improves the efficiency of the device.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this TRIAC can withstand elevated temperature environments, increasing its versatility and reliability.

Trigger Device Type: TRIAC

Being a TRIAC allows this device to control AC power and switch between conducting in both directions, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that this TRIAC can function effectively even in cold environments, expanding its range of potential applications.

Maximum RMS On-state Current: 25 A

A high maximum RMS On-state Current rating indicates that this TRIAC can handle significant amounts of current, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 3.5 V

The low maximum DC Gate Trigger Voltage ensures that the TRIAC can be easily controlled with standard digital or analog signals.

Repetitive Peak Off-state Voltage: 200 V

The high Repetitive Peak Off-state Voltage rating ensures that the TRIAC can block high voltages effectively when it is in the off state.

Maximum Holding Current: 100 mA

The high Maximum Holding Current ensures that the TRIAC remains latched even after the gate current is removed, providing stable operation in various applications.

Technical Specifications

Triode For Alternating Current (TRIAC) 2N5273 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

150 mA

Maximum DC Gate Trigger Voltage:

3.5 V

Maximum Holding Current:

100 mA

Maximum Leakage Current:

1 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

2N5273 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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