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DTA3F

Onsemi

DTA3F by Onsemi

DTA3F by Onsemi is a TRIAC with 1.8V max on-state voltage, 15mA max DC gate trigger current, and 1mA max leakage current. It operates b/w -30 °C to 100°C, suitable for AC power control applications like dimmers and motor speed controllers.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,860 parts In-Stock

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1,860

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Vyrian

USA . 1,007 parts In-Stock

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1,007

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 243 parts In-Stock

1+ parts

$0.796

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243

$0.796

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Northwest PG Solutions

USA . 1,643 parts In-Stock

1+ parts

$0.875

100+ parts

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1,643

$0.875

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TANS Electronics

Latvia . 4,804 parts In-Stock

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4,804

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Corphita

USA . 1,772 parts In-Stock

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1,772

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SupplyDigital Components

Austria . 1,123 parts In-Stock

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1,123

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Corohmni

South Africa . 486 parts In-Stock

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486

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UHIMA Technologies

Türkiye . 392 parts In-Stock

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392

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Kulean Microsystems

USA . 285 parts In-Stock

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285

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Problanco Electronics

Mexico . 33 parts In-Stock

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Overview

Upgrade your electronics with the DTA3F by Onsemi, a high-quality TRIAC that offers unparalleled performance and reliability. Manufactured by Onsemi, a leader in semiconductor solutions, this product is perfect for a wide range of applications. From dimmer switches to motor control, the DTA3F provides exceptional value, benefits, and advantages to customers. Say goodbye to unreliable electronics and experience the difference with the DTA3F.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

Lower voltage helps in reducing power consumption and heat generation, making it energy-efficient.

Maximum DC Gate Trigger Current: 15 mA

A lower trigger current allows for precise control and reliable operation.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power loss and enhances overall efficiency of the product.

Maximum Operating Temperature: 100 °C

High operating temperature tolerance allows for reliable performance in various environmental conditions.

Trigger Device Type: TRIAC

Being a TRIAC device, it offers bidirectional control of AC power, making it versatile for different applications.

Minimum Operating Temperature: -30 °C

Wide temperature range ensures usability in both extreme cold and hot conditions.

Maximum RMS On-state Current: 3 A

Higher current rating enables handling of heavier loads, increasing the product's utility.

Maximum DC Gate Trigger Voltage: 2 V

Low trigger voltage facilitates easy interfacing with control circuits, enhancing usability.

Repetitive Peak Off-state Voltage: 500 V

High voltage rating allows for safe operation in high-power applications, improving product reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA3F attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

1 mA

Maximum On-state Voltage:

1.8 V

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-30 Cel

Maximum RMS On-state Current:

3 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA3F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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