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DTA3E

Onsemi

DTA3E by Onsemi

DTA3E by Onsemi is a TRIAC with 1.8V max on-state voltage, 15mA max DC gate trigger current, and 1mA max leakage current. Ideal for AC applications, it has a max RMS on-state current of 3A and repetitive peak off-state voltage of 400V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,201 parts In-Stock

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Vyrian

USA . 221 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 408 parts In-Stock

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$0.440

100+ parts

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$0.423

408

$0.440

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$0.423

Northwest PG Solutions

USA . 534 parts In-Stock

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$0.484

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$0.427

534

$0.484

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$0.427

Kulean Microsystems

USA . 7,156 parts In-Stock

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7,156

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Problanco Electronics

Mexico . 2,501 parts In-Stock

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SupplyDigital Components

Austria . 1,611 parts In-Stock

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TANS Electronics

Latvia . 949 parts In-Stock

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949

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UHIMA Technologies

Türkiye . 187 parts In-Stock

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Corphita

USA . 139 parts In-Stock

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Corohmni

South Africa . 100 parts In-Stock

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Overview

Unlock the power of efficient current control with the DTA3E by Onsemi. Designed for a wide range of applications, this TRIAC device offers reliable performance and precise voltage regulation. With a maximum RMS on-state current of 3A and a repetitive peak off-state voltage of 400V, the DTA3E ensures consistent operation even in demanding environments. Trust in Onsemi's reputation for quality and innovation, and experience the unparalleled value and benefits that the DTA3E brings to your projects. Elevate your designs with the superior performance of the DTA3E today.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

Low on-state voltage helps in reduced power dissipation and improved efficiency of the product.

Maximum DC Gate Trigger Current: 15 mA

The high gate trigger current ensures reliable switching of the TRIAC, making it suitable for various applications.

Maximum Leakage Current: 1 mA

Low leakage current leads to better performance and less power consumption, enhancing the overall efficiency of the product.

Maximum Operating Temperature: 100 °C

Wide operating temperature range allows the product to operate in extreme conditions, making it versatile and suitable for different environments.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature enables the product to function in cold environments without any issues.

Maximum RMS On-state Current: 3 A

High on-state current rating makes the product suitable for handling heavy loads and high-power applications.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient switching and control of the TRIAC, enhancing the overall performance of the product.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating provides better insulation and protection, allowing the product to handle higher voltages safely.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA3E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

1 mA

Maximum On-state Voltage:

1.8 V

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-30 Cel

Maximum RMS On-state Current:

3 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA3E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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