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TIC246E

Texas Instruments

TIC246E by Texas Instruments

TIC246E by Texas Instruments is a TRIAC with 16A RMS current, 500V repetitive peak off-state voltage, and 2.5V max DC gate trigger voltage. It operates b/w -40°C to 110°C, ideal for AC power control in various applications like lighting dimmers and motor speed controllers.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,856 parts In-Stock

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Digiode

USA . 1,511 parts In-Stock

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Parana Technologies

USA . 1,725 parts In-Stock

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$1.882

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$2.426

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$1.882

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$2.426

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DigiPath Technology Company

USA . 1,443 parts In-Stock

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$2.073

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$1.907

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$2.073

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ChromeModa Solutions

Germany . 4,492 parts In-Stock

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$2.115

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$1.734

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IDEA Electronic Components Group

UK . 1,638 parts In-Stock

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$2.115

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$1.904

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AZTECH Wire

Italy . 613 parts In-Stock

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$10.223

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Ampacity Inc.

Singapore . 1,331 parts In-Stock

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$11.100

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Semicontronic

India . 722 parts In-Stock

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$21.100

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$20.572

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$20.467

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One Stop Electronics

USA . 186 parts In-Stock

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$21.100

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Corphita

USA . 3,515 parts In-Stock

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Corohmni

South Africa . 313 parts In-Stock

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Overview

The TIC246E by Texas Instruments is a top-of-the-line Triode For Alternating Current (TRIAC) that promises unparalleled quality and reliability. With a maximum RMS On-state Current of 16 A and a Repetitive Peak Off-state Voltage of 500 V, this trigger device type TRIAC is perfect for a wide range of applications. Whether you're looking to control the power in your home appliances or industrial machinery, the TIC246E offers exceptional performance and efficiency. Trust Texas Instruments for cutting-edge technology that delivers value and peace of mind to customers.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

The low trigger current requirement allows for easy and efficient control of the TRIAC, making it suitable for various applications.

Maximum Leakage Current: 2 mA

The low leakage current ensures minimal wastage of power and helps maintain the efficiency of the product.

Maximum Operating Temperature: 110 °C

With a high operating temperature range, this TRIAC can withstand challenging environments and operate consistently under harsh conditions.

Trigger Device Type: TRIAC

Being a TRIAC, this product offers bidirectional control of alternating current, making it versatile and suitable for a wide range of AC power control applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in cold environments, expanding the range of potential applications for this TRIAC.

Maximum RMS On-state Current: 16 A

The high RMS current rating allows the TRIAC to handle heavy loads while maintaining stable operation, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low trigger voltage requirement enables easy interfacing with control circuits and ensures efficient triggering of the TRIAC.

Repetitive Peak Off-state Voltage: 500 V

The high off-state voltage capability ensures reliable isolation and protection in AC power control applications, making the product suitable for use in various electrical systems.

Maximum Holding Current: 50 mA

The holding current specification ensures the TRIAC remains in the conductive state once triggered, providing reliable and consistent performance during operation.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC246E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC246E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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