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MAC4DSN

Onsemi

MAC4DSN by Onsemi

MAC4DSN by Onsemi is a TRIAC with max. RMS on-state current of 4A, DC gate trigger voltage of 1.3V, and repetitive peak off-state voltage of 800V. Ideal for AC power control applications due to its high operating temperature range (-40 to 125 °C) and low leakage current (0.01mA).

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 1,297 parts In-Stock

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Digiode

USA . 610 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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TANS Electronics

Latvia . 8,332 parts In-Stock

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Kulean Microsystems

USA . 4,686 parts In-Stock

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SupplyDigital Components

Austria . 4,600 parts In-Stock

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Problanco Electronics

Mexico . 3,471 parts In-Stock

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Corphita

USA . 1,958 parts In-Stock

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UHIMA Technologies

Türkiye . 455 parts In-Stock

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Corohmni

South Africa . 328 parts In-Stock

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Overview

Unleash the power of MAC4DSN by Onsemi, a top-tier TRIAC designed for optimum performance and reliability. Manufactured by industry leader Onsemi, this surface-mount device offers seamless operation with a maximum RMS On-state current of 4A and a repetitive peak off-state voltage of 800V. Perfect for a wide range of applications, from lighting control to motor speed regulation, the MAC4DSN delivers unparalleled quality and efficiency. Trust in Onsemi's expertise and elevate your projects with this cutting-edge TRIAC - the ultimate solution for all your AC switching needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 10 mA

Allows for efficient and reliable gate triggering, ensuring proper performance of the TRIAC.

Surface Mount: YES

Makes it easy to integrate into compact electronic devices or PCBs, saving space and simplifying assembly.

Maximum Leakage Current: 0.01 mA

Ensures minimal power loss and helps maintain the efficiency of the device.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Trigger Device Type: TRIAC

A reliable and common trigger device type used in various applications.

Minimum Operating Temperature: -40 °C

Capable of operating in low-temperature conditions without performance degradation.

Maximum RMS On-state Current: 4 A

A high current rating allows for the handling of larger loads, making it versatile for different applications.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage ensures efficient switching and control of the TRIAC.

Repetitive Peak Off-state Voltage: 800 V

A high off-state voltage rating ensures reliability and safety in high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

Provides protection against voltage transients and ensures stability during switching operations.

Maximum Holding Current: 15 mA

Ensures that the TRIAC remains latched during continuous conduction, improving reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC4DSN attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

15 mA

Maximum Leakage Current:

.01 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

YES

Trigger Device Type:

Trade Compliance

MAC4DSN Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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