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MAC4DHM-001G

Onsemi

MAC4DHM-001G by Onsemi

MAC4DHM-001G by Onsemi is a 4 QUADRANT LOGIC LEVEL TRIAC with 600V Repetitive Peak Off-state Voltage. It has a Max RMS On-state Current of 4A and Max DC Gate Trigger Current of 10mA. Ideal for applications requiring precise AC power control in industrial settings.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,482 parts In-Stock

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Digiode

USA . 1,941 parts In-Stock

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1,941

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Kulean Microsystems

USA . 6,657 parts In-Stock

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6,657

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SupplyDigital Components

Austria . 6,476 parts In-Stock

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TANS Electronics

Latvia . 4,612 parts In-Stock

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Problanco Electronics

Mexico . 4,348 parts In-Stock

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Corphita

USA . 1,509 parts In-Stock

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1,509

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UHIMA Technologies

Türkiye . 905 parts In-Stock

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905

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Corohmni

South Africa . 74 parts In-Stock

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Overview

Discover the MAC4DHM-001G by Onsemi, a top-of-the-line TRIAC that guarantees reliability and performance. Manufactured by Onsemi, a leader in semiconductor solutions, this product offers seamless integration and exceptional quality. Ideal for a wide range of applications, this TRIAC provides customers with unparalleled value and benefits. Whether you're looking for efficiency, durability, or precision, the MAC4DHM-001G delivers it all. Upgrade your projects with this cutting-edge component and experience the difference Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the triode, making it long-lasting and reliable.

Maximum DC Gate Trigger Current: 10 mA

Allows for precise triggering and control of the triode.

Configuration: SINGLE

Simplified design for easy installation and maintenance.

Package Shape: RECTANGULAR

Space-efficient design for easy integration into various systems.

Terminal Form: THROUGH-HOLE

Provides secure connections for stable performance.

Maximum Leakage Current: 2 mA

Ensures minimal power loss and efficient operation.

No. of Terminals: 3

Simplified connection setup for easy installation.

Package Style (Meter): IN-LINE

Versatile mounting options for flexible installation.

Maximum Operating Temperature: 110 °C

Wide range of operating temperature for versatility in different environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Allows for precise control and switching of AC power.

Minimum Operating Temperature: -40 °C

Ability to operate in extreme cold environments.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for long-term durability.

Terminal Position: SINGLE

Simplified connection setup for easy installation.

Maximum RMS On-state Current: 4 A

High current rating for handling heavy loads.

Maximum DC Gate Trigger Voltage: 1.3 V

Low trigger voltage for efficient control and performance.

Case Connection: MAIN TERMINAL 2

Clear labeling for easy identification and setup.

Repetitive Peak Off-state Voltage: 600 V

High voltage rating for handling AC power applications.

Minimum Critical Rate of Rise of Off-state Voltage: 20 V/us

Quick response time for reliable switching operations.

Maximum Holding Current: 15 mA

Ensures stable operation during extended periods of use.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC4DHM-001G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

20 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

15 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC4DHM-001G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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