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MAC4DHM

Onsemi

MAC4DHM by Onsemi

MAC4DHM by Onsemi is a TRIAC with 600V repetitive peak off-state voltage, 4A max RMS on-state current, and 5mA max DC gate trigger current. Ideal for AC power control applications, it operates b/w -40 °C to 110°C temperature range and features surface mount capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,908 parts In-Stock

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Vyrian

USA . 516 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Problanco Electronics

Mexico . 5,732 parts In-Stock

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Kulean Microsystems

USA . 5,041 parts In-Stock

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SupplyDigital Components

Austria . 3,448 parts In-Stock

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TANS Electronics

Latvia . 941 parts In-Stock

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UHIMA Technologies

Türkiye . 384 parts In-Stock

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Corohmni

South Africa . 84 parts In-Stock

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Corphita

USA . 60 parts In-Stock

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Overview

Discover the MAC4DHM by Onsemi, a high-quality TRIAC that offers reliable performance and versatility. With its surface mount design and maximum RMS on-state current of 4A, this product is perfect for a wide range of applications. From controlling light dimmers to motor speed control, the MAC4DHM provides precise and efficient operation. Trust in Onsemi's reputation for excellence in manufacturing and unlock the potential of your projects with the MAC4DHM.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current ensures efficient operation and reduces power consumption.

Surface Mount: YES

Allows for easy installation on PCB and saves space.

Maximum Leakage Current: 0.01 mA

Low leakage current enhances safety and reliability of the product.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows for versatile usage in different environments.

Trigger Device Type: TRIAC

TRIAC technology enables bidirectional control of AC power, making it suitable for various applications.

Minimum Operating Temperature: -40 °C

Operational in extreme low temperatures provides reliability in harsh conditions.

Maximum RMS On-state Current: 4 A

High on-state current rating allows the product to handle heavy loads with ease.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage ensures efficient switching and control of the TRIAC.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating provides insulation and protection against voltage spikes.

Maximum Holding Current: 15 mA

Sufficient holding current ensures the TRIAC remains in the on-state to prevent accidental turn-off.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC4DHM attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

15 mA

Maximum Leakage Current:

.01 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

YES

Trigger Device Type:

Trade Compliance

MAC4DHM Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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