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MAC4DCN

Onsemi

MAC4DCN by Onsemi

MAC4DCN by Onsemi is a TRIAC with max RMS on-state current of 4A, DC gate trigger voltage of 5V, and repetitive peak off-state voltage of 800V. Ideal for AC power control applications due to its high operating temperature range (-40 to 125 °C) and surface mount capability.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,175 parts In-Stock

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Vyrian

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Kepictronics

USA . 13,000 parts In-Stock

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TANS Electronics

Latvia . 7,843 parts In-Stock

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SupplyDigital Components

Austria . 7,106 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,009 parts In-Stock

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Assy Fe

Spain . 3,465 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,339 parts In-Stock

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Corphita

USA . 1,883 parts In-Stock

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Kulean Microsystems

USA . 1,331 parts In-Stock

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Problanco Electronics

Mexico . 991 parts In-Stock

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UHIMA Technologies

Türkiye . 469 parts In-Stock

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Corohmni

South Africa . 402 parts In-Stock

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Overview

Experience superior performance and reliability with the MAC4DCN TRIAC by Onsemi. This cutting-edge device combines high-quality manufacturing with advanced technology, offering a wide range of applications in the electronics industry. From lighting controls to motor speed regulation, this TRIAC delivers unmatched efficiency and precision. Say goodbye to downtime and hello to seamless operation with the MAC4DCN - your ultimate solution for all your AC power control needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 500 mA

The high maximum DC gate trigger current allows for reliable and consistent triggering of the TRIAC, ensuring stability in operation.

Surface Mount: YES

Being surface mountable makes the TRIAC easy to install and saves space on the PCB, making it a convenient choice for compact designs.

Maximum Leakage Current: 0.01 mA

The low maximum leakage current helps in reducing power wastage and improves overall efficiency of the product.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this TRIAC can withstand elevated temperatures without any performance degradation, ensuring reliable operation in demanding environments.

Trigger Device Type: TRIAC

Being a TRIAC, this device is suitable for AC power control applications and provides precise switching capabilities for various loads.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this TRIAC to function effectively in cold environments, making it versatile for different operating conditions.

Maximum RMS On-state Current: 4 A

The high maximum RMS on-state current rating makes this TRIAC suitable for handling moderate to high current loads, making it versatile for various applications.

Maximum DC Gate Trigger Voltage: 5 V

The low maximum DC gate trigger voltage ensures that the device can be triggered with a low input voltage, making it suitable for low-power control applications.

Repetitive Peak Off-state Voltage: 800 V

The high repetitive peak off-state voltage rating provides a safe operating margin for the TRIAC, making it suitable for high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

The minimum critical rate of rise of off-state voltage ensures fast and reliable turn-off of the TRIAC, reducing the risk of voltage spikes and improving overall system safety.

Maximum Holding Current: 35 mA

The high maximum holding current ensures that the TRIAC remains latched in the on-state, providing stable operation under varying load conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC4DCN attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

500 mA

Maximum DC Gate Trigger Voltage:

5 V

Maximum Holding Current:

35 mA

Maximum Leakage Current:

.01 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

YES

Trigger Device Type:

Trade Compliance

MAC4DCN Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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