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MAC4DCN-1

Onsemi

MAC4DCN-1 by Onsemi

MAC4DCN-1 by Onsemi is a TRIAC with 500mA DC gate trigger current, 4A RMS on-state current, and 800V repetitive peak off-state voltage. It is used in applications requiring AC power control such as dimmers, motor speed controllers, and heating control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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R&J Components

USA . 1,118 parts In-Stock

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Digiode

USA . 893 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 8,046 parts In-Stock

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SupplyDigital Components

Austria . 2,549 parts In-Stock

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Problanco Electronics

Mexico . 989 parts In-Stock

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Kulean Microsystems

USA . 543 parts In-Stock

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Corohmni

South Africa . 439 parts In-Stock

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UHIMA Technologies

Türkiye . 403 parts In-Stock

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Corphita

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Overview

Discover the MAC4DCN-1 by Onsemi, a top-quality TRIAC designed for a wide range of applications. With a reputation for excellence, Onsemi delivers reliable and high-performance products that exceed industry standards. The MAC4DCN-1 is perfect for controlling AC power in various devices, offering customers unmatched value, efficiency, and versatility. Experience seamless operation and peace of mind with this innovative TRIAC from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, making it easy to handle and long-lasting.

Maximum DC Gate Trigger Current: 500 mA

Higher gate trigger current allows for reliable and consistent switching of the TRIAC, ensuring proper operation in various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and installation, making it easier to integrate this TRIAC into different systems.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting of the TRIAC on circuit boards or in enclosures.

Maximum Leakage Current: 0.01 mA

Low leakage current leads to improved efficiency and reduced power consumption, making this TRIAC a cost-effective choice.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and reduces the chances of wiring errors, making installation straightforward.

Package Style (Meter): IN-LINE

In-line package style is compact and space-saving, making it suitable for applications where size constraints are a concern.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance in harsh environments without the risk of overheating.

Trigger Device Type: TRIAC

TRIAC trigger device type offers precise control over switching and provides versatility for a wide range of alternating current applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for usage in cold conditions without compromising performance or reliability.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good electrical conductivity and solderability, making it easy to connect the TRIAC in circuits.

Maximum RMS On-state Current: 4 A

High maximum RMS on-state current allows the TRIAC to handle large current loads, suitable for applications requiring high power output.

Case Connection: MAIN TERMINAL 2

Clearly labeled case connection simplifies installation and helps avoid wiring errors, ensuring proper operation of the TRIAC.

Repetitive Peak Off-state Voltage: 800 V

High repetitive peak off-state voltage ensures that the TRIAC can handle high voltage applications with reliability and safety.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

Fast critical rate of rise of off-state voltage provides protection against voltage spikes and transients, enhancing the durability of the TRIAC.

Maximum Holding Current: 35 mA

Having a high maximum holding current ensures that the TRIAC remains in the on-state even in the presence of small current fluctuations, improving stability.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC4DCN-1 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

500 mA

Maximum DC Gate Trigger Voltage:

5 V

Maximum Holding Current:

35 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

Maximum Leakage Current:

.01 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC4DCN-1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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