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TIC253A

Texas Instruments

TIC253A by Texas Instruments

TIC253A by Texas Instruments is a TRIAC with 20A RMS on-state current, 2.5V DC gate trigger voltage, and 100V repetitive peak off-state voltage. It operates b/w -40°C to 125°C, ideal for AC power control applications requiring precise triggering and low leakage current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,179 parts In-Stock

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Digiode

USA . 1,333 parts In-Stock

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Semicontronic

India . 1,492 parts In-Stock

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$1.100

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$1.072

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$1.067

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One Stop Electronics

USA . 1,141 parts In-Stock

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$1.100

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Parana Technologies

USA . 1,549 parts In-Stock

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$3.487

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$4.010

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DigiPath Technology Company

USA . 2,051 parts In-Stock

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$3.840

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$3.532

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$3.840

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ChromeModa Solutions

Germany . 6,274 parts In-Stock

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$3.918

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$3.213

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IDEA Electronic Components Group

UK . 334 parts In-Stock

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$3.526

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AZTECH Wire

Italy . 218 parts In-Stock

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$7.994

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Ampacity Inc.

Singapore . 1,074 parts In-Stock

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Corphita

USA . 2,197 parts In-Stock

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Corohmni

South Africa . 462 parts In-Stock

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Assy Fe

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Overview

Unlock the power of seamless control and precision with the TIC253A by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability in their products. The TIC253A falls under the category of Triode For Alternating Current (TRIAC), making it ideal for a wide range of applications. With a maximum RMS On-state Current of 20A and a Repetitive Peak Off-state Voltage of 100V, this trigger device offers unparalleled performance and efficiency. Get ready to experience the benefits of superior technology with the TIC253A.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

Allows for efficient triggering of the TRIAC, ensuring reliable performance.

Maximum Leakage Current: 2 mA

Low leakage current helps in maintaining the stability of the TRIAC during off-state.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for use in various environments without risk of overheating.

Trigger Device Type: TRIAC

Being a TRIAC ensures that the product can handle both positive and negative AC currents efficiently.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, the TRIAC can be used in cold environments without performance issues.

Maximum RMS On-state Current: 20 A

High on-state current rating enables the TRIAC to handle heavy loads effectively.

Maximum DC Gate Trigger Voltage: 2.5 V

Low trigger voltage requirement ensures compatibility with a wide range of control systems.

Repetitive Peak Off-state Voltage: 100 V

Sufficient off-state voltage rating allows for reliable switching of AC loads.

Maximum Holding Current: 50 mA

The holding current ensures that the TRIAC remains latched in the conducting state after triggering.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC253A attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

20 A

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC253A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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