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BTA316-800B0,127

Ween Semiconductors

BTA316-800B0,127 by Ween Semiconductors

TRIAC; Surface Mount: NO; Maximum DC Gate Trigger Current: 50 mA; Minimum Operating Temperature: -40 Cel; Repetitive Peak Off-state Voltage: 800 V; Maximum DC Gate Trigger Voltage: 1.5 V;

Median Price

$0.596

Lifecycle Status

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11

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Avnet

USA . 5,000 parts In-Stock

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Rochester

USA . 527 parts In-Stock

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$0.596

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$0.495

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$0.441

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Chip1Stop

Japan . 30 parts In-Stock

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Digiode

USA . 1,224 parts In-Stock

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Nova Conductors

Japan . 98 parts In-Stock

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Ozdisan Elektronik

Türkiye . 819 parts In-Stock

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TME

Poland . 663 parts In-Stock

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$0.553

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$0.516

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Vyrian

USA . 8,275 parts In-Stock

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VNN

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NAC Semi

USA . 619 parts In-Stock

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Ampacity Inc.

Singapore . 1,846 parts In-Stock

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$0.416

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Corphita

USA . 999 parts In-Stock

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Continental Prestige Electronics

USA . 3,970 parts In-Stock

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Argo Parts USA

USA . 385 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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$0.469

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Microchip USA

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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GreenTree Electronics

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Eastek

USA . 5,000 parts In-Stock

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UNI Independent Distributors

Spain . 2,686 parts In-Stock

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Technical Specifications

Triode For Alternating Current (TRIAC) BTA316-800B0,127 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Ween Semiconductors

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

2500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

60 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.5 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Trigger Device Type:

Trade Compliance

BTA316-800B0,127 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Ween Semiconductors

WeEn Semiconductors Co., Ltd was registered as a company on Aug 5, 2015. WeEn’s global footprint has an operational headquarters in Shanghai and wholly owned subsidiaries and centers in Jilin & Hongkong, north east China (Front-End Fabrication) Shanghai and Manchester, UK (Research & Development) , Dongguan(Warehouse and Distribution), and cities throughout the world (Sales Offices and Customer Service Access). In September 2018, WeEn added its new, in-house, reliability and failure analysis laboratory in Nanchang, Jiangxi Province, China. With a heritage of over 50 years in semiconductor development and manufacturing, WeEn as a key player has focused on developing a wide and deep portfolio of industry-leading power products including Silicon Carbide Power Devices, Silicon Controlled Rectifiers and Triacs, standard and fast recovery Power Diodes , TVS and ESD protection Devices and IGBTs and modules. All these products are widely used in the markets for telecommunications, computers, consumer electronics, intelligent home appliances, lighting, automotive and power management applications. WeEn seeks to help our customers achieve improved cost and production efficiency and contribute to the development of global intelligent manufacturing.

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