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BTA310-600E,127

NXP Semiconductors

BTA310-600E,127 by NXP Semiconductors

BTA310-600E,127 TRIAC from NXP Semiconductors features a max on-state voltage of 1.5 V and can handle up to 10 A RMS current. With a peak off-state voltage of 600 V, it operates efficiently in high-temperature environments up to 150 °C. Ideal for AC control applications, it ensures reliable performance with minimal leakage.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

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Vyrian

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Anansix

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One Stop Electronics

USA . 1,428 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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UNI Independent Distributors

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Corphita

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Native Components

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Overview

Unlock the potential of your designs with the BTA310-600E,127 from NXP Semiconductors, a leader in innovation and quality. This robust TRIAC delivers exceptional performance in AC applications, offering remarkable efficiency and reliability for your projects. With its wide operating temperature range and high voltage capability, it ensures durability under various conditions, making it ideal for industrial control systems, lighting, and HVAC solutions. Empower your next application with a trusted component that combines value and superior technology!

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

A low on-state voltage ensures minimal power loss during operation, making this TRIAC efficient in energy consumption.

Maximum DC Gate Trigger Current: 10 mA

This low gate trigger current allows for easy interfacing with low-power control circuits, enhancing compatibility with various systems.

Maximum Leakage Current: 0.5 mA

A low leakage current contributes to the overall reliability and safety of the circuit, reducing the risk of unexpected power drain.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature indicates robust performance in demanding environments, making it suitable for industrial applications.

Trigger Device Type: TRIAC

This TRIAC design ensures efficient control of alternating current flows, proven in a wide range of applications from lighting to motor control.

Minimum Operating Temperature: -40 °C

A wide operating temperature range allows this TRIAC to function reliably in both extreme cold and hot conditions.

Terminal Finish: Tin (Sn)

The tin terminal finish enhances corrosion resistance, ensuring long-term stability and performance in various environments.

Maximum RMS On-state Current: 10 A

Capable of handling high RMS currents, this TRIAC is ideal for applications requiring significant power control.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage makes this TRIAC compatible with low-voltage control systems, simplifying circuit design.

Repetitive Peak Off-state Voltage: 600 V

With a high repetitive peak off-state voltage, this TRIAC is suitable for handling substantial electrical loads, enhancing its application range.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/µs

A high critical rate of rise allows for rapid shutoff capability, improving performance in fast-switching applications.

Maximum Holding Current: 15 mA

A low maximum holding current helps in maintaining control with minimal power requirements, making it efficient for various circuits.

Technical Specifications

Triode For Alternating Current (TRIAC) BTA310-600E,127 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from NXP Semiconductors

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

15 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.5 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Trigger Device Type:

Trade Compliance

BTA310-600E,127 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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