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BTA310-800C,127

NXP Semiconductors

BTA310-800C,127 by NXP Semiconductors

The BTA310-800 °C,127 by NXP Semiconductors is a TRIAC designed for AC control applications. It features a max on-state voltage of 1.5V, an RMS on-state current of 10A, and operates b/w -40 °C to 150 °C. Ideal for switching and controlling power in various electronic devices.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,597 parts In-Stock

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Anansix

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Vyrian

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Component Stockers USA

USA . 12,582 parts In-Stock

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One Stop Electronics

USA . 1,465 parts In-Stock

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Northwest PG Solutions

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Native Components

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Overview

Unlock superior performance with the BTA310-800 °C,127 from NXP Semiconductors. Renowned for their quality and innovation, NXP delivers this TRIAC designed for reliable AC switching in various applications, from home appliances to industrial automation. Enjoy robust efficiency, low leakage, and a wide operating temperature range, empowering your designs with enhanced durability and energy savings. Choose BTA310-800 °C,127 for exceptional reliability and performance!

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

A low maximum on-state voltage means reduced power loss and enhanced energy efficiency during operation.

Maximum DC Gate Trigger Current: 35 mA

This relatively low trigger current makes it suitable for use with a variety of control circuits, simplifying integration.

Maximum Leakage Current: 0.5 mA

Minimal leakage current indicates low power wastage, making it reliable for energy-sensitive applications.

Maximum Operating Temperature: 150 °C

Withstanding high temperatures ensures reliability and durability in demanding environments.

Trigger Device Type: TRIAC

As a TRIAC, this device can control AC loads efficiently, providing versatility in application.

Minimum Operating Temperature: -40 °C

Capable of functioning in extremely low temperatures makes it ideal for outdoor and harsh environment applications.

Terminal Finish: Tin (Sn)

Tin finish ensures good solderability and corrosion resistance, enhancing longevity and performance.

Maximum RMS On-state Current: 10 A

A high RMS on-state current rating allows it to handle substantial loads, suitable for various power applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage requirement allows for compatibility with low-voltage control circuits, improving design flexibility.

Repetitive Peak Off-state Voltage: 800 V

A high off-state voltage capability makes this TRIAC suitable for high-voltage applications and improves safety.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/µs

This high rate of rise indicates excellent voltage handling capability, allowing for fast switching applications.

Maximum Holding Current: 35 mA

A low holding current specification contributes to energy savings by minimizing power consumption during stand-by conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) BTA310-800C,127 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from NXP Semiconductors

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

35 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.5 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Trigger Device Type:

Trade Compliance

BTA310-800C,127 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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