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DTA10E

Onsemi

DTA10E by Onsemi

DTA10E by Onsemi is a TRIAC with 1.4V max on-state voltage, 30mA max DC gate trigger current, and 2mA max leakage current. It operates b/w -40 °C to 150°C, suitable for applications requiring up to 10A RMS on-state current such as lighting controls and motor speed control.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 2,113 parts In-Stock

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Vyrian

USA . 1,205 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 3 parts In-Stock

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Native Components

USA . 891 parts In-Stock

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$0.606

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Northwest PG Solutions

USA . 2,232 parts In-Stock

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$0.666

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TANS Electronics

Latvia . 7,983 parts In-Stock

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SupplyDigital Components

Austria . 6,934 parts In-Stock

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Problanco Electronics

Mexico . 5,539 parts In-Stock

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Kulean Microsystems

USA . 4,194 parts In-Stock

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Corphita

USA . 1,187 parts In-Stock

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UHIMA Technologies

Türkiye . 397 parts In-Stock

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Corohmni

South Africa . 84 parts In-Stock

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Overview

Unlock the power of seamless control with the DTA10E by Onsemi. Crafted with precision and reliability in mind, this TRIAC device offers unparalleled performance and efficiency for a wide range of applications. From lighting control to motor speed regulation, the DTA10E provides the perfect solution for your needs. Trust in Onsemi's expertise and innovation to bring you a product that delivers exceptional value and benefits, making your projects smoother and more successful than ever before. Experience the difference with the DTA10E today.

Feature Benefit Bullets

Maximum On-state Voltage: 1.4 V

Low maximum on-state voltage helps in reducing power loss and improving efficiency of the product.

Maximum DC Gate Trigger Current: 30 mA

Higher maximum DC gate trigger current ensures reliable and stable switching of the TRIAC.

Maximum Leakage Current: 2 mA

Low maximum leakage current helps in minimizing power wastage and improving overall performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation under various conditions.

Trigger Device Type: TRIAC

Being a TRIAC trigger device, it offers bidirectional control of current flow which is essential for AC applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the product can function in cold environments without any issues.

Maximum RMS On-state Current: 10 A

High maximum RMS on-state current capability makes the product suitable for handling higher loads.

Maximum DC Gate Trigger Voltage: 1.5 V

Low maximum DC gate trigger voltage enables efficient triggering of the TRIAC.

Repetitive Peak Off-state Voltage: 400 V

High repetitive peak off-state voltage rating ensures the product can withstand voltage spikes and surges.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA10E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.4 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA10E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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