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DTA10C

Onsemi

DTA10C by Onsemi

DTA10C by Onsemi is a TRIAC with 1.4V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. It operates at up to 125 °C and has a max RMS on-state current of 10A. Ideal for applications requiring precise AC power control like dimmers and motor speed controllers.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,254 parts In-Stock

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Digiode

USA . 343 parts In-Stock

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343

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Kulean Microsystems

USA . 7,262 parts In-Stock

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SupplyDigital Components

Austria . 2,692 parts In-Stock

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Corphita

USA . 1,594 parts In-Stock

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UHIMA Technologies

Türkiye . 889 parts In-Stock

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Northwest PG Solutions

USA . 823 parts In-Stock

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TANS Electronics

Latvia . 513 parts In-Stock

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Native Components

USA . 459 parts In-Stock

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Problanco Electronics

Mexico . 282 parts In-Stock

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Corohmni

South Africa . 119 parts In-Stock

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Overview

Experience the superior quality and reliability of the DTA10C by Onsemi, a leading manufacturer in the industry. This TRIAC device offers unmatched performance and efficiency, making it ideal for a wide range of applications. Whether you need precise control over AC power or want to improve the functionality of your electronic devices, the DTA10C delivers. Trust in Onsemi's reputation for excellence and see the difference this product can make in your projects. Unlock new possibilities with the DTA10C today.

Feature Benefit Bullets

Maximum On-state Voltage: 1.4V

Low on-state voltage drops minimize power dissipation and help improve efficiency.

Maximum DC Gate Trigger Current: 50mA

This allows for reliable and consistent triggering of the TRIAC, ensuring proper operation.

Maximum Leakage Current: 2mA

Low leakage current helps prevent unwanted power consumption when the device is supposed to be off.

Maximum Operating Temperature: 125 °C

With a high operating temperature, this TRIAC can withstand demanding conditions and maintain performance.

Trigger Device Type: TRIAC

Being a TRIAC, this device is suitable for AC switching applications providing versatility and compatibility.

Maximum RMS On-state Current: 10A

High on-state current capability allows for handling larger loads, making it versatile for various applications.

Maximum DC Gate Trigger Voltage: 3V

With a low trigger voltage requirement, it can be easily controlled by most common electronic circuits.

Repetitive Peak Off-state Voltage: 200V

The high off-state voltage rating makes it suitable for handling higher voltage applications.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA10C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.4 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA10C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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