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TIC225N

Texas Instruments

TIC225N by Texas Instruments

TIC225N by Texas Instruments is a TRIAC with 15mA DC Gate Trigger Current, 2mA Leakage Current, and 110°C Operating Temperature. It is used as a trigger device in AC applications with 8A RMS On-state Current, 3V DC Gate Trigger Voltage, and 800V Repetitive Peak Off-state Voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,750 parts In-Stock

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8,750

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Digiode

USA . 1,052 parts In-Stock

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1,052

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PUI

USA . 10 parts In-Stock

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10

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LittleDiode

UK . 4 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,729 parts In-Stock

1+ parts

$3.283

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$3.806

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1,729

$3.283

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$3.806

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DigiPath Technology Company

USA . 1,539 parts In-Stock

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$3.615

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1,539

$3.615

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ChromeModa Solutions

Germany . 3,068 parts In-Stock

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$3.689

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$3.025

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3,068

$3.689

$3.025

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IDEA Electronic Components Group

UK . 86 parts In-Stock

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$3.689

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$3.320

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86

$3.689

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$3.320

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AZTECH Wire

Italy . 681 parts In-Stock

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$15.468

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One Stop Electronics

USA . 1,261 parts In-Stock

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$18.100

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1,261

$18.100

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Corphita

USA . 2,627 parts In-Stock

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2,627

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Assy Fe

Spain . 11 parts In-Stock

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Overview

Unlock the power of efficient and reliable performance with the TIC225N by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality with this Triode for Alternating Current (TRIAC). Perfect for a wide range of applications, this product offers customers unparalleled value and benefits. Experience seamless operation and enhanced productivity with the TIC225N, making it the ideal choice for your electronic needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Lower gate trigger current ensures efficient triggering of the TRIAC, leading to better performance.

Maximum Leakage Current: 2 mA

Low leakage current helps in reducing power losses and increasing the overall efficiency of the product.

Maximum Operating Temperature: 110 °C

High operating temperature range allows the product to be used in a wide range of environments without compromising performance.

Trigger Device Type: TRIAC

Being a TRIAC, this product can control AC power effectively in various applications.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures the product can operate reliably even in extremely cold conditions.

Maximum RMS On-state Current: 8 A

High on-state current rating allows the product to handle higher loads with ease.

Maximum DC Gate Trigger Voltage: 3 V

Low trigger voltage ensures efficient triggering of the device with minimal power consumption.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating ensures the product can handle high voltage applications without any issues.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Fast commutation voltage rate ensures quick switching of the TRIAC, improving overall performance.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

High critical rate of rise of off-state voltage allows the TRIAC to quickly turn off, enhancing efficiency and reliability.

Maximum Holding Current: 30 mA

High holding current ensures that the TRIAC remains in the on-state even in noisy environments, maintaining stability.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC225N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC225N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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