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MAC224A10

Onsemi

MAC224A10 by Onsemi

MAC224A10 by Onsemi is a single TRIAC with 800V repetitive peak off-state voltage and 40A max RMS on-state current. It operates b/w -40 to 125 °C, ideal for AC power control applications requiring a 4 quadrant logic level TRIAC trigger device.

Median Price

$3.975

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 571 parts In-Stock

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$1.000

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Ace Electronics

USA . 14 parts In-Stock

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$6.950

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Digiode

USA . 1,931 parts In-Stock

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Florida Circuit

USA . 20 parts In-Stock

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Corohmni

South Africa . 495 parts In-Stock

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$6.950

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TANS Electronics

Latvia . 8,007 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,466 parts In-Stock

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Kulean Microsystems

USA . 5,322 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,977 parts In-Stock

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SupplyDigital Components

Austria . 4,414 parts In-Stock

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Kepictronics

USA . 3,800 parts In-Stock

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Problanco Electronics

Mexico . 1,503 parts In-Stock

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Corphita

USA . 1,086 parts In-Stock

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UHIMA Technologies

Türkiye . 33 parts In-Stock

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Overview

Discover the MAC224A10 by Onsemi, a top-quality TRIAC that offers unparalleled performance and reliability. Manufactured by a trusted name in the industry, this product is perfect for a wide range of applications. From lighting control to motor speed regulation, the MAC224A10 provides customers with exceptional value and benefits. With its advanced features and durable construction, this TRIAC is guaranteed to exceed your expectations. Experience the advantages of choosing Onsemi for all your electronic component needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the triac, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 50 mA

Allows for precise and reliable triggering of the triac, ensuring efficient operation.

Configuration: SINGLE

Simplified design and operation for ease of use.

Package Shape: RECTANGULAR

Space-efficient design for easy integration into various applications.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure connections for installation.

Maximum Leakage Current: 2 mA

Ensures minimal power loss when the triac is in the off state.

No. of Terminals: 3

Simple interface with external circuits for flexibility in use.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting in various applications.

Maximum Operating Temperature: 125 °C

Suitable for a wide range of operating environments without compromising performance.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Provides precise control over switching operations.

Minimum Operating Temperature: -40 °C

Can withstand low-temperature conditions for versatile use.

Terminal Finish: TIN

Ensures reliable and consistent electrical connections.

Terminal Position: SINGLE

Simplified wiring setup for easy installation.

Maximum RMS On-state Current: 40 A

Capable of handling high current loads for a variety of applications.

Maximum DC Gate Trigger Voltage: 2 V

Low voltage requirement for triggering, reducing power consumption.

Case Connection: MAIN TERMINAL 2

Clear designation for terminal connections for easy installation.

Repetitive Peak Off-state Voltage: 800 V

Can handle high voltage levels for reliable performance.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Smooth commutation process for efficient switching operations.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

Ensures rapid switching between on and off states for responsive performance.

Maximum Holding Current: 75 mA

Allows for maintaining the on-state without continuous gate current.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC224A10 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

75 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

40 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC224A10 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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