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NYT6-5D6DTG

Onsemi

NYT6-5D6DTG by Onsemi

NYT6-5D6DTG by Onsemi is a TRIAC with max DC gate trigger current of 10mA, leakage current of 0.001mA, and max operating temp of 110 °C. Ideal for AC applications requiring a trigger device, it has a max RMS on-state current of 6A and repetitive peak off-state voltage of 600V.

Median Price

$2.062

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,050 parts In-Stock

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-

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$1.950

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$1.740

10k+ parts

$1.640

7,050

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$1.950

$1.740

$1.640

Verical

USA . 7,050 parts In-Stock

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$2.175

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$2.175

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Distributors (In-Stock)

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Digiode

USA . 905 parts In-Stock

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$2.062

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905

$2.062

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Vyrian

USA . 1,922 parts In-Stock

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$2.170

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$2.170

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Distributors (Availability)

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Corphita

USA . 227 parts In-Stock

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$1.953

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227

$1.953

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Corohmni

South Africa . 423 parts In-Stock

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$2.170

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423

$2.170

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$3.586

100+ parts

$3.263

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$2.941

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270

$3.586

$3.263

$2.941

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Problanco Electronics

Mexico . 6,199 parts In-Stock

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Kulean Microsystems

USA . 5,649 parts In-Stock

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SupplyDigital Components

Austria . 5,077 parts In-Stock

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TANS Electronics

Latvia . 1,657 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 362 parts In-Stock

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Overview

Discover the cutting-edge NYT6-5D6DTG by Onsemi, a top-of-the-line Triode For Alternating Current (TRIAC) that offers unparalleled quality and reliability. Manufactured by Onsemi, this TRIAC is designed to deliver exceptional performance in a variety of applications. From lighting control to motor speed regulation, this product ensures smooth operation and precise control. With a maximum RMS On-state Current of 6A and a Repetitive Peak Off-state Voltage of 600V, the NYT6-5D6DTG guarantees optimal functionality. Trust Onsemi for superior technology that exceeds expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 10 mA

The low gate trigger current allows for efficient control of the TRIAC, reducing power consumption and improving overall performance.

Maximum Leakage Current: 0.001 mA

The low leakage current ensures minimal power loss when the device is in the off state, contributing to energy efficiency.

Maximum Operating Temperature: 110 °C

The high operating temperature range makes this TRIAC suitable for a variety of environments and applications, increasing its versatility.

Trigger Device Type: TRIAC

Being a TRIAC allows for bidirectional conduction, enabling control of AC power with precision and reliability.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the TRIAC can function in colder climates or environments, making it a robust choice.

Terminal Finish: Tin (Sn)

The tin terminal finish provides good conductivity and corrosion resistance, ensuring a reliable connection in various conditions.

Maximum RMS On-state Current: 6 A

The high on-state current rating allows the TRIAC to handle substantial electrical loads, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Voltage: 1.3 V

The low gate trigger voltage helps in triggering the device easily and efficiently, enhancing the overall performance.

Repetitive Peak Off-state Voltage: 600 V

The high off-state voltage rating ensures that the TRIAC can withstand high voltage spikes or transients, improving its reliability and durability.

Minimum Critical Rate of Rise of Off-state Voltage: 60 V/us

The high rate of rise of off-state voltage means that the TRIAC can respond quickly to voltage changes, enhancing its ability to protect connected devices.

Maximum Holding Current: 20 mA

The high holding current ensures that the TRIAC remains in the on-state even in noisy or fluctuating conditions, improving its stability and performance.

Technical Specifications

Triode For Alternating Current (TRIAC) NYT6-5D6DTG attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

60 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

20 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.001 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Trigger Device Type:

Trade Compliance

NYT6-5D6DTG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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