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TIC246A

Texas Instruments

TIC246A by Texas Instruments

TIC246A by Texas Instruments is a TRIAC with max. RMS On-state Current of 16A, DC Gate Trigger Voltage of 2.5V, and Operating Temp. range from -40 to 110°C. It is used as a trigger device in AC circuits for applications requiring precise current control and switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,154 parts In-Stock

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Digiode

USA . 1,140 parts In-Stock

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Parana Technologies

USA . 1,010 parts In-Stock

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$1.799

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-

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$2.357

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1,010

$1.799

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$2.357

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DigiPath Technology Company

USA . 1,385 parts In-Stock

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$1.981

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$1.981

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ChromeModa Solutions

Germany . 4,692 parts In-Stock

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$2.021

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$1.657

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$2.021

$1.657

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IDEA Electronic Components Group

UK . 932 parts In-Stock

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$2.021

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$1.819

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932

$2.021

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$1.819

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AZTECH Wire

Italy . 344 parts In-Stock

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$6.025

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$6.025

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Semicontronic

India . 307 parts In-Stock

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$7.100

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$6.922

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$6.887

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307

$7.100

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One Stop Electronics

USA . 1,002 parts In-Stock

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$9.100

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$9.100

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Ampacity Inc.

Singapore . 851 parts In-Stock

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$12.100

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$12.100

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Corphita

USA . 1,129 parts In-Stock

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Corohmni

South Africa . 426 parts In-Stock

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Assy Fe

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Overview

Unlock endless possibilities with the TIC246A by Texas Instruments, a top-tier manufacturer known for its superior quality and reliability. As a Triode For Alternating Current (TRIAC), this innovative product offers seamless performance in various applications, from dimmer switches to motor speed controls. Experience the value and benefits of this cutting-edge technology with maximum on-state current of 16 A and precise triggering capabilities. Elevate your projects with the TIC246A and witness unmatched efficiency and durability.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

Low gate trigger current required for activating this TRIAC makes it efficient and reliable for use in various applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss when the TRIAC is in the off state, leading to energy efficiency.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows this TRIAC to function effectively in diverse environments without any performance issues.

Trigger Device Type: TRIAC

Being a TRIAC, this device is suitable for AC applications where controlling power flow in both directions is required.

Minimum Operating Temperature: -40 °C

Capable of functioning in extremely low temperatures, making it versatile for use in various industries and settings.

Maximum RMS On-state Current: 16 A

High on-state current capacity allows this TRIAC to handle larger loads, making it suitable for heavy-duty applications.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage requirement makes this device easy to control and integrate into different circuits.

Repetitive Peak Off-state Voltage: 100 V

With a high off-state voltage rating, this TRIAC provides reliable isolation and protection for connected devices.

Maximum Holding Current: 50 mA

Sufficient holding current ensures the TRIAC remains in the on-state without random turn-offs, contributing to stability and performance.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC246A attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC246A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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