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DTA16G

Onsemi

DTA16G by Onsemi

DTA16G by Onsemi is a TRIAC with 1.4V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. It operates at up to 125 °C and has a max RMS on-state current of 16A. Ideal for applications requiring precise AC power control in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,057 parts In-Stock

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Digiode

USA . 349 parts In-Stock

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349

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Native Components

USA . 390 parts In-Stock

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$184.740

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$177.350

390

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$177.350

Northwest PG Solutions

USA . 686 parts In-Stock

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$203.214

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TANS Electronics

Latvia . 6,004 parts In-Stock

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Problanco Electronics

Mexico . 3,927 parts In-Stock

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Kulean Microsystems

USA . 3,427 parts In-Stock

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SupplyDigital Components

Austria . 2,134 parts In-Stock

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Corphita

USA . 1,890 parts In-Stock

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UHIMA Technologies

Türkiye . 483 parts In-Stock

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Corohmni

South Africa . 81 parts In-Stock

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Overview

Experience the power of innovation with the DTA16G by Onsemi, a high-quality Triode For Alternating Current (TRIAC) designed to enhance your electrical applications. Manufactured by industry leader Onsemi, this TRIAC offers reliability and performance like no other. From dimmers and motor speed control to heating and lighting systems, the DTA16G is versatile and efficient, providing value and benefits to customers looking for a seamless electrical solution. Upgrade your systems today with the DTA16G and experience the difference that quality and precision can make.

Feature Benefit Bullets

Maximum On-state Voltage: 1.4 V

Low on-state voltage helps in reducing the power dissipation and increases efficiency of the product.

Maximum DC Gate Trigger Current: 50 mA

High gate trigger current ensures reliable and consistent switching of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current minimizes power loss and improves overall performance of the TRIAC.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the TRIAC to be used in various environments without overheating.

Trigger Device Type: TRIAC

Being a TRIAC, it is suitable for controlling both AC and DC power, providing versatility in applications.

Maximum RMS On-state Current: 16 A

High RMS on-state current capability makes the TRIAC suitable for handling heavy loads and high power applications.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage ensures efficient control of the TRIAC and helps in reducing power consumption.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage allows the TRIAC to withstand high voltage spikes and surges, increasing reliability and durability.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA16G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.4 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA16G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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