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BTA206X-800CT:127

NXP Semiconductors

BTA206X-800CT:127 by NXP Semiconductors

NXP Semiconductors' BTA206X-800CT:127 is a TRIAC with 6A RMS on-state current, 800V repetitive peak off-state voltage, and -40 to 150°C operating temperature range. Ideal for AC power control applications requiring a max DC gate trigger current of 35mA.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 25,594 parts In-Stock

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$0.373

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$0.309

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$0.276

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$0.373

$0.309

$0.276

Verical

USA . 21,000 parts In-Stock

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$0.387

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$0.345

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$0.345

Chip1Stop

Japan . 30 parts In-Stock

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Digiode

USA . 422 parts In-Stock

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$0.291

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Nova Conductors

Japan . 1,010 parts In-Stock

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$0.363

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Ozdisan Elektronik

Türkiye . 7,871 parts In-Stock

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$0.562

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NAC Semi

USA . 6,262 parts In-Stock

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$0.864

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$0.785

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VNN

France . 3,175 parts In-Stock

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Anansix

USA . 2,870 parts In-Stock

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Vyrian

USA . 1,912 parts In-Stock

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Ampacity Inc.

Singapore . 11,431 parts In-Stock

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$0.260

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Corphita

USA . 2,310 parts In-Stock

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Continental Prestige Electronics

USA . 6,365 parts In-Stock

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$0.355

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Argo Parts USA

USA . 1,761 parts In-Stock

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$0.363

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$0.352

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Netroflash

USA . 1,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Microchip USA

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Perfect Parts

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UNI Independent Distributors

Spain . 3,310 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Enhance your electronic projects with the BTA206X-800CT:127 by NXP Semiconductors. Known for their top-quality manufacturing, NXP delivers exceptional performance in the Triode For Alternating Current (TRIAC) category. With a maximum RMS On-state Current of 6A and a Repetitive Peak Off-state Voltage of 800V, this TRIAC is versatile and reliable for a wide range of applications. Experience seamless operation and efficiency with the BTA206X-800CT:127, designed to meet your needs and exceed your expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 35 mA

With a high maximum gate trigger current, this product can easily handle the necessary current to control the TRIAC, ensuring reliable and consistent performance.

Maximum Leakage Current: 2 mA

The low maximum leakage current helps in minimizing power loss and improving the efficiency of the device.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this product to be used in a wide range of environments without compromising on performance or longevity.

Trigger Device Type: TRIAC

Being a TRIAC trigger device type, this product is suitable for bidirectional control of alternating current, making it versatile and practical for various applications.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this product can still function effectively in cold conditions, providing reliability in diverse environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good connectivity and conductivity, contributing to the overall performance and durability of the product.

Maximum RMS On-state Current: 6 A

The high maximum RMS on-state current capacity allows this product to handle higher electrical loads, making it suitable for a variety of applications.

Maximum DC Gate Trigger Voltage: 1.5 V

With a low maximum gate trigger voltage, this product can be triggered easily and efficiently, providing precise control over the TRIAC.

Repetitive Peak Off-state Voltage: 800 V

The high repetitive peak off-state voltage ensures that this product can withstand high voltage levels, enhancing its durability and reliability.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

Having a minimum critical rate of rise of off-state voltage of 500 V/us indicates high sensitivity and responsiveness to changes in voltage, enabling quick and accurate control.

Maximum Holding Current: 35 mA

With a high maximum holding current, this product can maintain its current state without triggering unintentionally, enhancing stability and control.

Technical Specifications

Triode For Alternating Current (TRIAC) BTA206X-800CT:127 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from NXP Semiconductors

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

35 mA

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Trigger Device Type:

Trade Compliance

BTA206X-800CT:127 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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