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TIC225C

Texas Instruments

TIC225C by Texas Instruments

TIC225C by Texas Instruments is a TRIAC with 8A RMS current, 300V repetitive peak off-state voltage, and 15mA max DC gate trigger current. It operates b/w -40 to 110°C and is ideal for AC power control applications due to its high reliability and low leakage current of 2mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,504 parts In-Stock

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Digiode

USA . 2,465 parts In-Stock

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2,465

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Distributors (Availability)

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Parana Technologies

USA . 1,351 parts In-Stock

1+ parts

$2.526

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-

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$3.015

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1,351

$2.526

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$3.015

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ChromeModa Solutions

Germany . 4,629 parts In-Stock

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$2.838

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$2.327

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4,629

$2.838

$2.327

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IDEA Electronic Components Group

UK . 1,064 parts In-Stock

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$2.838

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$2.554

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$2.838

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$2.554

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Semicontronic

India . 1,464 parts In-Stock

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$8.100

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$7.898

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$7.857

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1,464

$8.100

$7.898

$7.857

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AZTECH Wire

Italy . 1,234 parts In-Stock

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$15.880

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$15.880

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Ampacity Inc.

Singapore . 591 parts In-Stock

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$16.100

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$16.100

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One Stop Electronics

USA . 289 parts In-Stock

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$21.100

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$21.100

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DigiPath Technology Company

USA . 1,463 parts In-Stock

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$2.559

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$2.559

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Corphita

USA . 784 parts In-Stock

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784

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Corohmni

South Africa . 173 parts In-Stock

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Overview

Unlock the power of seamless control with the TIC225C by Texas Instruments. Designed for efficiency and reliability, this TRIAC device offers a wide range of applications in lighting, motor control, and heating systems. With a maximum RMS on-state current of 8A and a maximum DC gate trigger voltage of 3V, the TIC225C ensures smooth operation even in the most demanding environments. Trust Texas Instruments for superior quality and performance, and experience the unmatched value and benefits that this innovative product brings to your projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

The high maximum DC gate trigger current ensures reliable triggering of the TRIAC, making it suitable for a wide range of applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures efficient operation and minimal power loss in the circuit.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature, this TRIAC can withstand elevated temperatures without degradation in performance.

Trigger Device Type: TRIAC

Being a TRIAC, this device allows bidirectional control of current flow, making it versatile for AC power control applications.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this TRIAC can function in a wide range of environmental conditions.

Maximum RMS On-state Current: 8 A

The high maximum RMS on-state current rating makes this TRIAC suitable for handling moderate to high current loads.

Maximum DC Gate Trigger Voltage: 3 V

Low trigger voltage requirement ensures efficient control signal handling, improving overall circuit efficiency.

Repetitive Peak Off-state Voltage: 300 V

The high off-state voltage rating allows for safe operation in high voltage applications.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Fast critical rate of rise of commutation voltage ensures smooth switching and minimizes the risk of voltage spikes.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

High critical rate of rise of off-state voltage ensures quick turn-off of the TRIAC, improving its efficiency.

Maximum Holding Current: 30 mA

The high maximum holding current ensures stable operation of the TRIAC, preventing unintentional turn-off during operation.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC225C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

300 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC225C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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