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DTA6-N

Onsemi

DTA6-N by Onsemi

DTA6-N by Onsemi is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 6A max RMS on-state current. It is used as a trigger device in applications requiring precise AC power control, such as dimmer switches and motor speed controllers.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,301 parts In-Stock

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Vyrian

USA . 1,180 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 20 parts In-Stock

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$0.799

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20

$0.799

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Northwest PG Solutions

USA . 985 parts In-Stock

1+ parts

$0.879

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985

$0.879

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SupplyDigital Components

Austria . 6,774 parts In-Stock

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6,774

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Problanco Electronics

Mexico . 6,001 parts In-Stock

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TANS Electronics

Latvia . 5,947 parts In-Stock

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Kulean Microsystems

USA . 4,929 parts In-Stock

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4,929

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Corphita

USA . 1,440 parts In-Stock

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UHIMA Technologies

Türkiye . 628 parts In-Stock

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Corohmni

South Africa . 141 parts In-Stock

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141

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Overview

Discover the superior quality and reliability of the DTA6-N by Onsemi, a leading manufacturer in the industry. This TRIAC device offers exceptional performance and efficiency for a wide range of applications. Whether you're looking to control power in lighting systems, heating equipment, or motor speed controls, the DTA6-N delivers unmatched value and benefits. Trust in Onsemi's expertise and innovation to take your projects to the next level with this high-quality product.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage allows for efficient power management and reduces energy consumption, making this product cost-effective.

Maximum DC Gate Trigger Current: 30 mA

High gate trigger current ensures reliable switching performance and stable operation of the TRIAC, enabling consistent functionality.

Trigger Device Type: TRIAC

Using a TRIAC as the trigger device provides enhanced versatility and compatibility with a wide range of applications, making this product suitable for various uses.

Maximum RMS On-state Current: 6 A

High RMS on-state current capability allows the product to handle heavy electrical loads with ease, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient control and reliable operation of the TRIAC, enhancing the overall performance of the product.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating ensures safe and reliable operation of the TRIAC, providing protection against voltage spikes and surges.

Technical Specifications

Triode For Alternating Current (TRIAC) DTA6-N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum On-state Voltage:

1.5 V

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTA6-N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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