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TIC263N

Texas Instruments

TIC263N by Texas Instruments

TIC263N by Texas Instruments is a TRIAC with 25A RMS current, 800V repetitive peak off-state voltage, and 2.5V max DC gate trigger voltage. It operates b/w -40°C to 125°C and finds applications in AC power control circuits for various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,154 parts In-Stock

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Digiode

USA . 326 parts In-Stock

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Parana Technologies

USA . 3 parts In-Stock

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$3.516

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$4.041

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3

$3.516

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$4.041

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DigiPath Technology Company

USA . 1,669 parts In-Stock

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$3.872

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$3.872

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ChromeModa Solutions

Germany . 963 parts In-Stock

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$3.951

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$3.240

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$3.951

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IDEA Electronic Components Group

UK . 782 parts In-Stock

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$3.951

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$3.556

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AZTECH Wire

Italy . 707 parts In-Stock

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$9.698

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707

$9.698

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Ampacity Inc.

Singapore . 1,064 parts In-Stock

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$13.100

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Semicontronic

India . 189 parts In-Stock

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$18.100

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$17.648

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$17.557

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One Stop Electronics

USA . 1,586 parts In-Stock

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$30.100

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Corphita

USA . 4,034 parts In-Stock

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Corohmni

South Africa . 483 parts In-Stock

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Overview

Unlock the power of seamless control with the TIC263N from trusted manufacturer Texas Instruments. As a reliable Triode For Alternating Current (TRIAC), this component offers maximum DC Gate Trigger Current of 50 mA and a Repetitive Peak Off-state Voltage of 800 V, ensuring top-notch performance in a variety of applications. With a Maximum RMS On-state Current of 25 A and a tough Maximum Operating Temperature of 125 °C, this TRIAC is built to deliver unparalleled quality and efficiency. Experience the value and benefits of superior technology with the TIC263N, perfect for your next project.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

A low trigger current requirement makes this TRIAC energy-efficient and suitable for applications where power consumption is a concern.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss and helps in maintaining the efficiency of the device.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this TRIAC can withstand harsh environmental conditions and provide reliable performance in various applications.

Trigger Device Type: TRIAC

Being a TRIAC, this device offers bidirectional control of alternating current, making it versatile for a wide range of AC applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this TRIAC to be used in cold environments without compromising its performance.

Maximum RMS On-state Current: 25 A

With a high on-state current rating, this TRIAC is suitable for applications requiring the control of moderate to high AC loads.

Maximum DC Gate Trigger Voltage: 2.5 V

The low trigger voltage requirement makes this TRIAC compatible with a wide range of control circuits and ensures easy integration into different systems.

Repetitive Peak Off-state Voltage: 800 V

The high off-state voltage rating allows this TRIAC to safely switch high AC voltages, making it ideal for industrial and high-power applications.

Maximum Holding Current: 50 mA

The holding current value ensures the TRIAC remains in the on-state even after the gate trigger current is removed, providing stability in operation.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC263N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC263N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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