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TIC236M

Texas Instruments

TIC236M by Texas Instruments

TIC236M by Texas Instruments is a TRIAC with 12A RMS on-state current, 600V repetitive peak off-state voltage, and 110°C max operating temp. Ideal for AC power control applications due to its 50mA DC gate trigger current, -40°C min operating temp, and 2mA max leakage current.

Median Price

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11

In-Stock Inventory

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Vyrian

USA . 5,876 parts In-Stock

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Digiode

USA . 3,517 parts In-Stock

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Halfin

Belgium . 920 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 521 parts In-Stock

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Electronic Expediters

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Euro-Tech

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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LittleDiode

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Pegasus Components GmbH

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ACDS - Activité Composants Distribution Service

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GES GmbH

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Parana Technologies

USA . 299 parts In-Stock

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$2.380

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ChromeModa Solutions

Germany . 5,761 parts In-Stock

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IDEA Electronic Components Group

UK . 211 parts In-Stock

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AZTECH Wire

Italy . 844 parts In-Stock

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One Stop Electronics

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Component Stockers USA

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$99.990

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Corphita

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DigiPath Technology Company

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Glotronic Ltd.

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Overview

Enhance your electronic designs with the TIC236M by Texas Instruments, a top-quality TRIAC component that offers exceptional performance and reliability. From lighting controls to motor speed regulation, this versatile device is perfect for a wide range of applications. With a maximum RMS on-state current of 12A and a repetitive peak off-state voltage of 600V, the TIC236M provides superior functionality while maintaining energy efficiency. Trust in Texas Instruments' reputation for excellence and unlock the full potential of your projects with the TIC236M.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

Low DC gate trigger current ensures efficient and reliable operation, reducing power consumption and heat generation.

Maximum Leakage Current: 2 mA

Low leakage current helps in maintaining the stability of the device and prevents unintentional conduction.

Maximum Operating Temperature: 110 °C

High operating temperature range allows for versatility in different environmental conditions and ensures consistent performance.

Trigger Device Type: TRIAC

TRIACs are ideal for AC switching applications due to their ability to control power flow in both directions, making this product suitable for a variety of alternating current circuits.

Minimum Operating Temperature: -40 °C

Wide range of minimum operating temperature ensures the product can be used in cold environments without risk of malfunction.

Maximum RMS On-state Current: 12 A

High RMS on-state current rating allows the device to handle heavy loads with ease, making it suitable for high power applications.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage ensures easy and efficient control of the device, improving overall performance in AC switching applications.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating provides reliable isolation between the control and output circuits, ensuring safe operation in high voltage environments.

Maximum Holding Current: 50 mA

High holding current ensures the device remains in the on-state even after the triggering current is removed, improving stability of the circuit.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC236M attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC236M Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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