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BT137S-600E

NXP Semiconductors

BT137S-600E by NXP Semiconductors

The NXP Semiconductors BT137S-600E is a single TRIAC with 600V repetitive peak off-state voltage and 8A max RMS on-state current. It has a 10mA max DC gate trigger current, making it suitable for applications requiring precise AC power control in various electronic devices. The device operates b/w -40 to 125 °C and features gull wing terminals for easy surface mount installation.

Median Price

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Lifecycle Status

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Anansix

USA . 2,623 parts In-Stock

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Vyrian

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Digiode

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Nova Conductors

Japan . 99 parts In-Stock

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Prism Electronics

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Corohmni

South Africa . 258 parts In-Stock

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$2.183

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Ampacity Inc.

Singapore . 142 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,310 parts In-Stock

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AZTECH Wire

Italy . 216 parts In-Stock

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One Stop Electronics

USA . 689 parts In-Stock

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Semicontronic

India . 1,461 parts In-Stock

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Kepictronics

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Lixinc

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Perfect Parts

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Argo Parts USA

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Continental Prestige Electronics

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UNI Independent Distributors

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Corphita

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S.R.D Solutions

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Assy Fe

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Futuretech Components

Singapore . 795 parts In-Stock

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Bastille Electronics

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Overview

Discover the power and reliability of the BT137S-600E by NXP Semiconductors, a top-tier manufacturer known for cutting-edge technology. As a versatile Triode For Alternating Current (TRIAC), this product offers seamless performance in a wide range of applications. With a maximum RMS On-state Current of 8A and a Repetitive Peak Off-state Voltage of 600V, customers can trust in the quality and durability of this product. Whether you're looking to enhance your automation systems or improve your lighting controls, the BT137S-600E provides unmatched value and efficiency. Upgrade to NXP Semiconductors today and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for a variety of applications.

Maximum DC Gate Trigger Current: 10 mA

The low DC gate trigger current ensures efficient and reliable operation of the TRIAC.

Configuration: SINGLE

The single configuration simplifies the design and installation process.

Surface Mount: YES

The surface mount option allows for easy and compact integration into circuit boards.

Package Shape: RECTANGULAR

The rectangular shape saves space and enables efficient packing of components.

Maximum Leakage Current: 0.5 mA

The low maximum leakage current ensures minimal power loss and improved efficiency.

Maximum Repetitive Peak Off-state Leakage Current: 500 uA

The low off-state leakage current helps in reducing energy consumption and enhancing overall performance.

No. of Terminals: 2

The simplified two-terminal design makes the installation and connection process straightforward.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact circuit designs.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this TRIAC can withstand elevated temperature environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level design enables precise control and reliable performance in a variety of applications.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40°C ensures reliable operation even in cold environments.

Terminal Finish: TIN

The terminal finish with tin coating provides good conductivity and corrosion resistance.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and makes handling easier.

Maximum RMS On-state Current: 8 A

With a maximum RMS on-state current of 8A, this TRIAC is capable of handling high electrical loads.

Maximum DC Gate Trigger Voltage: 1.5 V

The low DC gate trigger voltage of 1.5V ensures efficient switching and control of the TRIAC.

Case Connection: MAIN TERMINAL 2

The case connection at main terminal 2 provides a secure and reliable connection point.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage of 600V allows for reliable performance in high voltage applications.

Maximum Holding Current: 20 mA

The maximum holding current of 20 mA ensures stable operation and prevents unintentional turn-off.

Technical Specifications

Triode For Alternating Current (TRIAC) BT137S-600E attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from NXP Semiconductors

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

20 mA

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

.5 mA

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

500 uA

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

Trade Compliance

BT137S-600E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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