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5961-01-110-3366

Texas Instruments

5961-01-110-3366 by Texas Instruments

The Texas Instruments 5961-01-110-3366 is a TRIAC with max DC gate trigger current of 50mA, max leakage current of 2mA, and max operating temp of 110°C. It is used as a trigger device in AC circuits, with applications in controlling power flow and switching operations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,454 parts In-Stock

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Digiode

USA . 2,753 parts In-Stock

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Parana Technologies

USA . 2,251 parts In-Stock

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$1.869

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$2.415

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$1.869

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IDEA Electronic Components Group

UK . 2,084 parts In-Stock

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$2.100

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$1.890

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ChromeModa Solutions

Germany . 88 parts In-Stock

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$2.100

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$1.722

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Semicontronic

India . 1,397 parts In-Stock

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$12.100

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$11.798

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$11.737

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Ampacity Inc.

Singapore . 296 parts In-Stock

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$13.100

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AZTECH Wire

Italy . 596 parts In-Stock

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$13.966

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One Stop Electronics

USA . 1,104 parts In-Stock

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Corphita

USA . 3,628 parts In-Stock

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Northwest PG Solutions

USA . 2,295 parts In-Stock

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DigiPath Technology Company

USA . 1,785 parts In-Stock

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Native Components

USA . 554 parts In-Stock

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Corohmni

South Africa . 381 parts In-Stock

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Overview

Upgrade your electrical systems with the high-quality 5961-01-110-3366 TRIAC from Texas Instruments. Designed for efficiency and reliability, this TRIAC offers maximum DC gate trigger current of 50 mA and a maximum RMS on-state current of 8 A. Perfect for a wide range of applications, including lighting control and motor speed regulation, this TRIAC ensures smooth operation at temperatures ranging from -40 to 110°C. Trust Texas Instruments for superior performance and value in every product.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

This Triode for Alternating Current (TRIAC) has a high maximum DC gate trigger current, allowing for reliable and consistent triggering of the device.

Maximum Leakage Current: 2 mA

With a low maximum leakage current, this TRIAC ensures efficient operation and minimal power loss when in the off-state.

Maximum Operating Temperature: 110 °C

The high maximum operating temperature of 110°C makes this TRIAC suitable for a wide range of applications, even in harsh environments.

Trigger Device Type: TRIAC

Being a TRIAC, this device is designed specifically for alternating current applications, providing reliable switching and control capabilities.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows this TRIAC to be used in cold conditions without sacrificing performance.

Maximum RMS On-state Current: 8 A

With a high maximum RMS on-state current of 8 A, this TRIAC is capable of handling significant load currents with ease.

Maximum DC Gate Trigger Voltage: 2.5 V

The low maximum DC gate trigger voltage of 2.5 V ensures that this TRIAC can be easily triggered with a low input voltage.

Repetitive Peak Off-state Voltage: 200 V

The high repetitive peak off-state voltage of 200 V allows this TRIAC to withstand high voltage transients and spikes.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

The minimum critical rate of rise of commutation voltage of 5 V/us ensures fast and reliable switching of this TRIAC, making it suitable for high-speed applications.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

The high minimum critical rate of rise of off-state voltage of 500 V/us indicates the ability of this TRIAC to quickly turn off and withstand high voltage fluctuations.

Maximum Holding Current: 60 mA

With a high maximum holding current of 60 mA, this TRIAC can maintain its on-state conduction even in the presence of external noise or disturbances.

Technical Specifications

Triode For Alternating Current (TRIAC) 5961-01-110-3366 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

5961-01-110-3366 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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