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MAC218A4

Onsemi

MAC218A4 by Onsemi

MAC218A4 by Onsemi is a TRIAC with 200V repetitive peak off-state voltage, 8A max RMS on-state current, and 2V max on-state voltage. It is used in AC power control applications due to its single configuration, through-hole terminals, and flange mount package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,103 parts In-Stock

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Digiode

USA . 373 parts In-Stock

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373

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Kulean Microsystems

USA . 4,888 parts In-Stock

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4,888

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SupplyDigital Components

Austria . 3,456 parts In-Stock

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Problanco Electronics

Mexico . 1,268 parts In-Stock

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UHIMA Technologies

Türkiye . 852 parts In-Stock

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852

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TANS Electronics

Latvia . 816 parts In-Stock

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Corphita

USA . 785 parts In-Stock

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Corohmni

South Africa . 500 parts In-Stock

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Overview

Experience the superior quality and reliability of the MAC218A4 by Onsemi, a leading manufacturer in the industry. This TRIAC device offers unparalleled performance and precision, making it ideal for a wide range of applications. Whether you're looking to control power in lighting systems, motor speed controllers, or heating elements, this product delivers exceptional value and benefits. Trust Onsemi's expertise and innovation to elevate your projects to new heights with the MAC218A4.

Feature Benefit Bullets

Maximum On-state Voltage: 2 V

Low on-state voltage ensures efficient conduction and minimal power loss.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the internal components of the TRIAC.

Maximum DC Gate Trigger Current: 50 mA

High gate trigger current ensures reliable and consistent switching of the TRIAC.

Configuration: SINGLE

Single configuration makes it easy to integrate into circuit designs.

Maximum Leakage Current: 2 mA

Low leakage current helps in reducing power consumption and heat generation.

Maximum RMS On-state Current: 8 A

High on-state current enables the TRIAC to handle heavy loads efficiently.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC218A4 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Voltage:

2 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC218A4 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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