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SYAL224

Onsemi

SYAL224 by Onsemi

SYAL224 by Onsemi is a TRIAC with 1.8V max on-state voltage, 40mA max DC gate trigger current, and 1mA max leakage current. It has a repetitive peak off-state voltage of 400V and min critical rate of rise of commutation voltage at 5V/us. This device is ideal for applications requiring high holding current up to 50000mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,094 parts In-Stock

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Digiode

USA . 1,456 parts In-Stock

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Problanco Electronics

Mexico . 7,141 parts In-Stock

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TANS Electronics

Latvia . 2,805 parts In-Stock

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Kulean Microsystems

USA . 2,426 parts In-Stock

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Corphita

USA . 1,614 parts In-Stock

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SupplyDigital Components

Austria . 598 parts In-Stock

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Corohmni

South Africa . 149 parts In-Stock

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UHIMA Technologies

Türkiye . 12 parts In-Stock

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Overview

Upgrade your electronics with the SYAL224 by Onsemi, a top-tier manufacturer known for their superior quality and reliability. This TRIAC is designed to deliver seamless performance in various applications, providing customers with unmatched value and benefits. With a maximum on-state voltage of 1.8V and a repetitive peak off-state voltage of 400V, the SYAL224 ensures smooth operation and enhanced efficiency. Trust Onsemi to elevate your projects with cutting-edge technology and unparalleled excellence.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

Low on-state voltage ensures efficient operation and minimizes power loss, making this product suitable for applications requiring high energy efficiency.

Maximum DC Gate Trigger Current: 40 mA

Low gate trigger current requirement allows for easy and reliable triggering of the TRIAC, making it suitable for control circuits that need precise switching.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power dissipation in off-state condition, making this TRIAC suitable for low-power applications where energy efficiency is critical.

Trigger Device Type: TRIAC

Being a TRIAC (Triode for Alternating Current), this device is capable of conducting in both directions, making it ideal for AC switching applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and reliability during assembly, ensuring a robust connection for the TRIAC in the circuit.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating allows the TRIAC to withstand voltage spikes and surges, making it suitable for high-voltage applications and ensuring device longevity.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Fast critical rate of rise of commutation voltage ensures quick and efficient switching of the TRIAC, suitable for high-speed switching applications where rapid response is required.

Maximum Holding Current: 50000 mA

High holding current capability allows the TRIAC to stay in the conducting state even after the gate current is removed, making it suitable for applications where a steady-state current is required.

Technical Specifications

Triode For Alternating Current (TRIAC) SYAL224 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum Holding Current:

50000 mA

JESD-609 Code:

e0

Maximum Leakage Current:

1 mA

Maximum On-state Voltage:

1.8 V

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

Trade Compliance

SYAL224 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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