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TIC253B

Texas Instruments

TIC253B by Texas Instruments

TIC253B by Texas Instruments is a single TRIAC with 3 terminals. It has a max RMS on-state current of 20A and can handle up to 50mA DC gate trigger current. Ideal for applications requiring a 4-quadrant logic level TRIAC, with a package style of flange mount and operating temperatures ranging from -40°C to 110°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,483 parts In-Stock

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Digiode

USA . 3,356 parts In-Stock

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LittleDiode

UK . 8 parts In-Stock

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ECAB

Sweden . 6 parts In-Stock

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Parana Technologies

USA . 2,298 parts In-Stock

1+ parts

$3.250

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$3.773

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DigiPath Technology Company

USA . 1,880 parts In-Stock

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$3.579

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ChromeModa Solutions

Germany . 2,755 parts In-Stock

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$3.652

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$2.995

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$3.652

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IDEA Electronic Components Group

UK . 1,493 parts In-Stock

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$3.652

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$3.287

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One Stop Electronics

USA . 1,003 parts In-Stock

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$5.100

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AZTECH Wire

Italy . 761 parts In-Stock

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$16.436

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Corphita

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Overview

Enhance the efficiency and reliability of your electrical systems with the TIC253B by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers superior quality products like the TIC253B, a TRIAC designed for alternating current applications. With its robust construction and advanced features, this device offers unmatched performance and durability. Ideal for a wide range of applications, this TRIAC provides customers with value, benefits, and advantages that will elevate their projects to the next level. Upgrade your systems today with the TIC253B from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the product durable and resistant to damage, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 50 mA

The high DC gate trigger current allows for reliable and efficient triggering of the device, making it suitable for various applications.

Configuration: SINGLE

The single configuration simplifies the installation and usage of the product, making it user-friendly.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and integration into different electronic systems.

Terminal Form: THROUGH-HOLE

The through-hole terminal form facilitates easy and secure connections to the circuit board, ensuring stable performance.

Maximum Leakage Current: 2 mA

The low maximum leakage current helps in reducing power wastage and improving the overall efficiency of the product.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit design and allows for different connection options to meet specific requirements.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers sturdy mounting options, ensuring secure placement in various applications.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions and operate reliably in demanding situations.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level TRIAC trigger device type allows for precise control and regulation of current flow, making it suitable for diverse electronic applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature enables the product to function efficiently even in extreme cold conditions, providing reliable performance throughout the year.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and ensures correct connection, enhancing the user experience.

Maximum RMS On-state Current: 20 A

The high maximum RMS on-state current rating allows the product to handle heavy loads and operate effectively in power-intensive applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low maximum DC gate trigger voltage ensures efficient triggering with minimal power consumption, making the product energy-efficient.

Case Connection: MAIN TERMINAL 2

The case connection with main terminal 2 provides a reliable and stable electrical connection, ensuring consistent performance in diverse operating conditions.

Repetitive Peak Off-state Voltage: 200 V

The repetitive peak off-state voltage rating of 200 V makes the product suitable for handling high voltage applications, offering reliable protection against voltage spikes.

Maximum Holding Current: 50 mA

The high maximum holding current allows the product to maintain its state even after triggering, ensuring stable performance under varying load conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC253B attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

20 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC253B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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