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TIC246B

Texas Instruments

TIC246B by Texas Instruments

TIC246B by Texas Instruments is a single TRIAC with 3 terminals, max. DC gate trigger current of 50 mA, and max. RMS on-state current of 16 A. It operates b/w -40 to 110 °C and has a repetitive peak off-state voltage of 200 V. Ideal for applications requiring precise AC power control in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,428 parts In-Stock

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Digiode

USA . 2,709 parts In-Stock

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2,709

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ACDS - Activité Composants Distribution Service

France . 53 parts In-Stock

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Parana Technologies

USA . 122 parts In-Stock

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$2.683

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$3.166

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122

$2.683

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$3.166

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IDEA Electronic Components Group

UK . 1,526 parts In-Stock

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$3.015

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$2.714

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ChromeModa Solutions

Germany . 586 parts In-Stock

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$3.015

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$2.472

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586

$3.015

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AZTECH Wire

Italy . 592 parts In-Stock

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$19.444

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592

$19.444

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One Stop Electronics

USA . 132 parts In-Stock

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$27.100

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$27.100

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Corphita

USA . 994 parts In-Stock

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Perfect Parts

USA . 119 parts In-Stock

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DigiPath Technology Company

USA . 73 parts In-Stock

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$2.718

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73

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Cyclops Electronics Ltd (Excess)

UK . 53 parts In-Stock

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Glotronic Ltd.

UK . 42 parts In-Stock

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Overview

Unlock the power of innovation with the TIC246B by Texas Instruments, a top-tier manufacturer known for excellence in quality and reliability. This Triode For Alternating Current (TRIAC) device boasts a range of applications, making it a versatile choice for various projects. With a maximum RMS On-state Current of 16A and a triggering voltage of 2.5V, this product offers exceptional value and performance. Experience seamless operation and enhanced efficiency with the TIC246B, your go-to solution for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various environmental conditions.

Maximum DC Gate Trigger Current: 50 mA

Allows for precise and controlled triggering of the device, leading to consistent performance.

Configuration: SINGLE

Simplified design and ease of installation due to single configuration.

Package Shape: RECTANGULAR

Space-efficient design for compact installations.

Terminal Form: THROUGH-HOLE

Enables easy mounting on circuit boards and ensures secure connection.

Maximum Leakage Current: 2 mA

Low leakage current helps in maintaining efficiency and reducing power wastage.

No. of Terminals: 3

Simplified wiring setup with only three terminals.

Package Style (Meter): FLANGE MOUNT

Allows for easy and secure mounting on equipment or panels.

Maximum Operating Temperature: 110 °C

High maximum operating temperature ensures reliability in demanding applications.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Provides precise control and compatibility with various logic level circuits.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for use in extreme conditions.

Terminal Position: SINGLE

Simplified wiring setup with single terminal position.

Maximum RMS On-state Current: 16 A

High on-state current rating for handling heavy loads efficiently.

Maximum DC Gate Trigger Voltage: 2.5 V

Low trigger voltage requirement for efficient control and operation.

Case Connection: MAIN TERMINAL 2

Clearly defined terminal for easy connection and troubleshooting.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating for reliable operation in off-state conditions.

Maximum Holding Current: 50 mA

Sufficient holding current for maintaining the device in the off-state until triggered.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC246B attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC246B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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