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MAC228A4

Onsemi

MAC228A4 by Onsemi

MAC228A4 by Onsemi is a single TRIAC with 3 terminals, max. DC gate trigger current of 5mA, and max. RMS on-state current of 8A. Ideal for applications requiring a 4 quadrant logic level TRIAC, it operates b/w -40 to 110 °C with a repetitive peak off-state voltage of 200V.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,525 parts In-Stock

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1,525

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Digiode

USA . 117 parts In-Stock

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117

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Bristol Electronics

USA . 45 parts In-Stock

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45

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Atlantic Semiconductor

USA . 45 parts In-Stock

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45

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PUI

USA . 14 parts In-Stock

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Advanced Electronics

New Zealand . 15 parts In-Stock

1+ parts

$4.995

100+ parts

$4.545

1k+ parts

$4.096

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15

$4.995

$4.545

$4.096

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Component Stockers USA

USA . 295 parts In-Stock

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$99.990

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Kepictronics

USA . 15,000 parts In-Stock

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Problanco Electronics

Mexico . 7,089 parts In-Stock

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TANS Electronics

Latvia . 6,891 parts In-Stock

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Kulean Microsystems

USA . 1,718 parts In-Stock

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SupplyDigital Components

Austria . 1,461 parts In-Stock

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Infinite Electronics LLP (Excess)

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Corphita

USA . 457 parts In-Stock

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UHIMA Technologies

Türkiye . 379 parts In-Stock

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Corohmni

South Africa . 298 parts In-Stock

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Overview

Discover the MAC228A4 by Onsemi, a top-quality TRIAC designed to meet your needs with precision and reliability. Manufactured by Onsemi, a trusted industry leader, this product offers unparalleled value and performance. Ideal for a wide range of applications, this TRIAC is a versatile solution for your electronic projects. Experience the benefits of seamless operation, high efficiency, and long-lasting durability with the MAC228A4. Upgrade your designs today with this innovative component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliability and durability in various operating conditions.

Maximum DC Gate Trigger Current: 5 mA

Allows for precise and controlled triggering of the device, leading to efficient performance and reduced power consumption.

Configuration: SINGLE

Simplifies the design and installation process, making it easy to integrate into different circuits.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement within electronic systems, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Enables convenient and secure connection to the circuit board, ensuring stable operation and ease of assembly.

Maximum Leakage Current: 2 mA

Helps prevent unwanted current flow in the off-state, enhancing the device's reliability and safety.

No. of Terminals: 3

Provides a simple interface for connecting external devices, making the device versatile and easy to use.

Package Style (Meter): FLANGE MOUNT

Facilitates easy installation and removal, enhancing the device's accessibility and serviceability.

Maximum Operating Temperature: 110 °C

Ensures stable performance over a wide range of temperatures, making the device suitable for various industrial applications.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Provides precise control and reliable switching operation, making the device ideal for applications requiring high accuracy.

Minimum Operating Temperature: -40 °C

Allows the device to operate in extreme cold conditions without compromising performance, expanding its usability in diverse environments.

Terminal Finish: TIN LEAD

Ensures good solderability and electrical conductivity, ensuring robust connections and long-term reliability.

Terminal Position: SINGLE

Simplifies the wiring process and minimizes the risk of errors or short circuits, improving overall system integrity.

Maximum RMS On-state Current: 8 A

Enables the device to handle high current loads effectively, making it suitable for demanding applications.

Maximum DC Gate Trigger Voltage: 2 V

Requires low voltage for triggering, reducing power consumption and improving efficiency in control circuits.

Case Connection: MAIN TERMINAL 2

Provides a secure and reliable connection point for external components, ensuring stable operation and easy integration.

Repetitive Peak Off-state Voltage: 200 V

Safely handles high voltage levels, making the device suitable for a wide range of industrial and consumer applications.

Minimum Critical Rate of Rise of Off-state Voltage: 25 V/us

Allows for fast response and reliable switching, ensuring precise control and protection against voltage spikes.

Maximum Holding Current: 15 mA

Ensures the device remains in the on-state without continuous gate triggering, enhancing stability and reliability in operation.

Peak Reflow Temperature °C: 235

Withstands high temperatures during reflow soldering processes, ensuring proper assembly and solder joint integrity.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC228A4 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

25 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

15 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC228A4 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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