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DTB8F

Onsemi

DTB8F by Onsemi

DTB8F by Onsemi is a TRIAC with 1.6V max on-state voltage, 50mA DC gate trigger current, and 2mA leakage current. It operates at up to 125 °C and handles 8A RMS on-state current, making it ideal for AC power control applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,011 parts In-Stock

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Vyrian

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Native Components

USA . 530 parts In-Stock

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$1.570

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Northwest PG Solutions

USA . 1,967 parts In-Stock

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$1.727

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TANS Electronics

Latvia . 7,531 parts In-Stock

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SupplyDigital Components

Austria . 6,385 parts In-Stock

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Problanco Electronics

Mexico . 3,274 parts In-Stock

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Corphita

USA . 326 parts In-Stock

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Corohmni

South Africa . 213 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 42 parts In-Stock

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Overview

Unlock the power of reliable and efficient electrical control with the Onsemi DTB8F Triode For Alternating Current (TRIAC). Manufactured by industry leader Onsemi, this high-quality component offers unmatched performance and durability for a wide range of applications. From lighting control to motor speed regulation, the DTB8F provides customers with the value, benefits, and advantages they need to succeed in their projects. Trust Onsemi for all your TRIAC needs and experience the difference in quality and reliability.

Feature Benefit Bullets

Maximum On-state Voltage: 1.6 V

Low on-state voltage helps in reducing power dissipation and improving efficiency.

Maximum DC Gate Trigger Current: 50 mA

Higher gate trigger current ensures reliable triggering of the device.

Maximum Leakage Current: 2 mA

Low leakage current is essential for maintaining efficiency and preventing overheating.

Maximum Operating Temperature: 125 °C

High operating temperature ensures the reliability and durability of the product under various operating conditions.

Trigger Device Type: TRIAC

This specific trigger device type ensures precise and controlled switching of the TRIAC.

Maximum RMS On-state Current: 8 A

High on-state current rating allows the device to handle larger loads and currents efficiently.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage allows for easier control and triggering of the device.

Repetitive Peak Off-state Voltage: 500 V

High off-state voltage rating ensures the device can handle high voltage applications safely.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB8F attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.6 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTB8F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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